Field-Plate Semiconductor Structure for Lower Ron·Qgd Switching Loss
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Solution Overview
Problem
Semiconductor devices face challenges in reducing loss, particularly in transistors, due to high resistance and charge requirements between the drain and source, leading to increased switching time and energy loss.
Innovation Solution
The semiconductor device incorporates a first conductive member with a unique configuration, including a field plate design that reduces electric field concentration and modifies the geometry of electrodes and conductive portions to minimize the product of resistance and charge, thereby reducing energy loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional transistor structure is used, then device simplicity is maintained, but high resistance between drain and source increases energy loss
Solution Approach 1:
The transistor structure is segmented into multiple functional regions including a drift region with first conductivity type, a second semiconductor region with second conductivity type, and a third semiconductor region with first conductivity type. This segmentation allows optimization of each region's electrical characteristics to reduce overall energy loss while managing device complexity through structured design.
Solution Approach 2:
Different regions of the transistor are assigned different conductivity types and doping concentrations to optimize local electrical properties. The drift region has specific doping characteristics, while the second semiconductor region has opposite conductivity type, creating localized quality variations that reduce resistance and energy loss throughout the device.
2Speed
If electric field concentration is not suppressed, then device structure is simpler, but switching time increases and switching efficiency decreases
Solution Approach 1:
The transistor is divided into multiple semiconductor regions with different conductivity types that work together to distribute and suppress electric field concentration. The drift region, second semiconductor region, and third semiconductor region create a structured approach to field management that improves switching speed without excessive complexity.
Solution Approach 2:
The invention changes key electrical parameters including doping concentrations and conductivity types across different regions. By optimizing these parameters in each region, the electric field distribution is controlled to suppress concentration effects, thereby improving switching speed and efficiency.
3Loss of energy
If breakdown voltage is not maintained at high level, then device structure is simpler, but energy loss increases
Solution Approach 1:
The drift region is specifically designed with first conductivity type doping at controlled concentrations to create a region optimized for withstanding high voltages. This local quality optimization in the drift region maintains high breakdown voltage while the overall device structure manages energy loss through coordinated regional properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses electric field concentration and reduces the parameter Ron⋅Qgd, leading to lower energy loss and improved switching efficiency while maintaining high breakdown voltage.
Implementation Method 1
A direction from the first electrode toward the first conductive portion is along a first direction. A second direction from the third electrode toward the first conductive member crosses the first direction.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The second electrode includes a conductive portion. The conductive portion is between the third electrode and the conductive member. The conductive member is electrically connected with the second electrode. The semiconductor member includes first to third semiconductor regions. The second semiconductor region is between the third semiconductor region and a portion of the first semiconductor region. The second semiconductor region is between the third electrode and the conductive member. The conductive portion is electrically connected with the second and third semiconductor regions. The first electrode is electrically connected with the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.