Field Programmable Redundant Memory Sector Remapping
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Solution Overview
Problem
Conventional memory elements in electronic devices require high voltage for post-fabrication screening and repair, making it impossible for end-users to repair defective memory sectors without specialized equipment, leading to premature discarding of repairable devices.
Innovation Solution
Field programming of redundant memory in electronic devices using bypass codes or keys at the I/O interface, allowing for temporary or permanent remapping of memory elements without the need for additional hardware, enabling repairs during normal operating mode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of repair
If high voltage programming mode is used for memory repair, then memory sectors can be deactivated and spare sectors activated, but specialized equipment is required and end-users cannot perform repairs
Solution Approach 1:
The memory device performs repair operations autonomously using its own internal high voltage generation capabilities during normal low-voltage operation modes, eliminating the need for external specialized repair equipment. The device self-diagnoses defective sectors and self-repairs by activating spare sectors through internally generated programming voltages.
Solution Approach 2:
The memory device integrates multiple functions including normal data storage, self-diagnosis of defective sectors, and self-repair operations within a single device architecture. The same memory controller that manages data operations also performs repair operations using bypass codes received through standard I/O interfaces.
2Adaptability or versatility
If spare memory sectors are provided for replacement, then defective sectors can be replaced during post-processing, but end-users still cannot perform repairs due to lack of high voltage capability
Solution Approach 1:
The memory device dynamically changes its operational voltage parameters, switching between normal low-voltage operation mode and high-voltage programming mode as needed. During normal operation, the device uses standard voltages for data access. When repair is needed, the device internally generates high programming voltages to deactivate defective sectors and activate spare sectors, then returns to low-voltage mode.
Solution Approach 2:
The memory device employs dynamic voltage switching and adaptive sector activation. The system continuously monitors memory health and dynamically activates spare sectors in response to detected defects. The voltage levels and operational modes are dynamically adjusted based on the specific repair needs without requiring external intervention.
3Reliability
If conventional memory design includes spare sectors, then repair is possible after manufacturing, but the complexity and inconvenience of reprogramming leads to premature discarding
Solution Approach 1:
The memory device autonomously performs the complete repair process including defect detection, bypass code processing, sector deactivation, and spare sector activation without requiring external reprogramming equipment. The device receives simple bypass codes through standard I/O interfaces and handles all complex repair operations internally, dramatically simplifying the repair process for end-users.
Solution Approach 2:
The patent introduces bypass codes as an intermediary mechanism that simplifies the repair interface. Instead of requiring direct manipulation of complex high-voltage programming signals, end-users only need to provide simple bypass codes through standard I/O interfaces. The memory device's controller translates these simple codes into the complex sequence of high-voltage operations needed for actual repair.
Data Source
AI summary
An electronic device is provided including an input/output (I/O) interface, a plurality of memory elements, a controller coupled to the I/O interface and the plurality of memory elements. In the device, the controller configured for operating the plurality of memory elements during a normal operating mode of the electronic device, where responsive to receiving a command for replacing a selected memory sector in the electronic device during the normal operating mode, the controller is configured for identifying one or more available spare memory sectors in the electronic device and modifying at least one memory map in the electronic device to replace the selected memory sector with the one of the available spare memory sectors.