Millimeter-Wave Fill Level Sensor Resonator Housing Layout
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Solution Overview
Problem
Conventional radar-based fill level sensors face challenges in achieving high resolution and accuracy at higher frequencies due to parasitic elements from bonding wires and material losses, making it difficult to realize reliable millimeter wave circuits.
Innovation Solution
A radar-based fill level sensor with a semiconductor element and a chip housing featuring a dielectric resonator structure, where the chip housing has a depression to position the resonator structure close to the semiconductor chip, and optionally a second resonator structure between them, using advanced manufacturing techniques like X-ray imaging and 2D/3D printing to minimize distance and optimize coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If standard SMD technology and bonding wires are used for millimeter wave circuits, then manufacturing ease is improved, but measurement precision deteriorates due to parasitic elements and material losses
Solution Approach 1:
The patent removes bonding wires and solder joints from the millimeter wave signal path, extracting the parasitic elements that degrade measurement precision. The semiconductor chip is connected directly to the resonator structure through the chip housing, eliminating the harmful intermediate connection structures.
Solution Approach 2:
The chip housing is designed as a galvanically conductive resonator structure that serves as an intermediary between the semiconductor chip and the measurement environment. This resonator structure directly couples the chip output to the millimeter wave field without introducing parasitic elements.
2Measurement precision
If higher operating frequencies are used, then level resolution is improved, but reliability deteriorates due to increased signal attenuation
Solution Approach 1:
The patent replaces conventional mechanical connection structures (bonding wires, solder joints) with a direct integrated resonator structure that is galvanically conductive to the semiconductor chip. This substitution eliminates the mechanical connection path that causes signal attenuation at high frequencies.
Solution Approach 2:
The chip housing is designed as a composite structure combining dielectric and conductive materials to create a resonator that efficiently couples the semiconductor chip to the millimeter wave field while minimizing losses at high operating frequencies.
3Ease of manufacture
If bonding wires and solder joints are used for connection, then ease of manufacture is improved, but reliability worsens due to parasitic effects at millimeter wave frequencies
Solution Approach 1:
The patent extracts and removes bonding wires and solder joints from the signal path by designing a chip housing that provides direct galvanic connection between the semiconductor chip and the resonator structure, eliminating the parasitic elements that compromise circuit reliability at millimeter wave frequencies.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the resolution and accuracy of level measurements by reducing parasitic effects and material losses, allowing for more reliable operation at higher frequencies.
Implementation Method 1
at least one first dielectric resonator structure (6) is arranged on a partial surface of the chip housing (4) in such a way that the chip housing (4) distances the resonator structure (6) from the coupling element (5) in a defined manner
Implementation Method 2
the at least one semiconductor chip (3) having at least one coupling element (5) which acts as a signal gate for electromagnetic waves
Data Source
Figure 1~2
Figure 3~4c
Figure 5a~5c
AI summary
The invention relates to a radar-based fill level sensor having at least one semiconductor element (2) that comprises at least one semiconductor chip (3) and a chip housing (4) inside which the at least one semiconductor chip (3) is arranged; the at least one semiconductor chip (3) includes at least one coupling element (5) that acts as a signal gate for electromagnetic waves, preferably in the millimeter wavelength range; the fill level sensor is characterized in that at least one first resonator structure (6) is arranged in a subarea of the surface of the chip housing (4).