Underlying Structure Patterning with Filled Openings for Precision
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Solution Overview
Problem
In the semiconductor fabrication process, the critical dimension of photolithography is shrinking, making it challenging to maintain precision and prevent deviations in the photoresist material during exposure and developing processes, which can lead to failures in semiconductor devices.
Innovation Solution
A method of patterning an underlying structure involves forming multiple photoresist layers, where each layer is patterned using the same or different photomasks, and these layers are used to guide etching processes to create patterned underlying structures with improved yield and reduced costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single photomask is used for patterned photoresist layers, then the photomask cost is reduced, but the manufacturing precision of subsequent photoresist layers may be affected due to the presence of underlying openings
Solution Approach 1:
A fill material is introduced as an intermediary substance to fill the openings in the underlying patterned photoresist layer before forming subsequent photoresist layers. This mediator prevents the underlying openings from affecting the precision of subsequent patterning operations, while still allowing the use of the same photomask design for multiple layers, thus resolving the contradiction between cost reduction and precision maintenance.
2Manufacturing precision
If multiple photomasks are used for different photoresist layers, then the manufacturing precision of each layer is maintained, but the production cost increases
Solution Approach 1:
The same photomask pattern is copied and reused for forming multiple patterned photoresist layers at different depths or positions. By using the fill material to isolate layers, the same mask design can be applied repeatedly without compromising precision, thereby reducing the need for multiple unique photomasks and lowering production costs.
3Device complexity
If openings are left empty in patterned photoresist layers, then the structure complexity is reduced, but the yield of subsequent patterning processes decreases
Solution Approach 1:
The openings in the underlying photoresist layer are filled with material before subsequent patterning operations are performed. This preliminary action prevents potential defects, contamination, or process variations that could arise from exposed openings, thereby improving the yield of subsequent patterning processes without significantly increasing the overall structure complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the yield of openings in patterned underlying structures by reducing the influence of initial openings on subsequent photoresist layers, thereby improving the reliability of semiconductor fabrication and reducing the cost associated with photomask production.
Implementation Method 1
a photoresist material is patterned through an exposure process
Implementation Method 2
an etching process is performed on the underlying structure using the patterned photoresist layer as a mask
Data Source
AI summary
A method of patterning an underlying structure includes the following. A first patterning process is performed on the underlying structure to form a first patterned underlying structure including a first opening. A patterned photoresist layer is formed, and the patterned photoresist layer fills the first opening. A second patterning process is performed on the first patterned underlying structure to form a second patterned underlying structure including the first opening and a second opening.