Semiconductor Layout Correction for Filler Cell Width Transitions
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Solution Overview
Problem
Current semiconductor device design methods face challenges in optimizing the layout of standard cells and filler cells, leading to inefficiencies and reduced reliability due to transition regions caused by differences in active line widths, which affect the manufacturing process and device characteristics.
Innovation Solution
A method is introduced that involves placing standard cells and filler cells in a semiconductor device layout, detecting transition regions due to width differences, and correcting the dummy active lines of filler cells to match the narrower active line width, thereby forming a corrected layout that minimizes transition regions and improves device reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If filler cells with dummy active lines are placed between standard cells with different active line widths, then the layout can accommodate varying cell widths, but transition regions are formed causing manufacturing issues and reduced device reliability
Solution Approach 1:
The patent applies local quality by making the dummy active line width variable rather than uniform. Specifically, the dummy active line width is adjusted locally at transition regions where it interfaces with standard cells of different widths, creating a gradient that smoothly bridges width differences and eliminates abrupt transitions that harm device reliability
Solution Approach 2:
The patent changes the parameter of dummy active line width from a fixed value to a variable value that adapts to neighboring standard cell widths. By modifying the width parameter locally at different positions of the dummy active line, the patent resolves transition region issues while maintaining layout adaptability
2Ease of manufacture
If the dummy active line width is made uniform across the filler cell, then the layout design is simplified, but transition regions cause manufacturing precision issues
Solution Approach 1:
Instead of uniform width, the dummy active line employs local quality variations where the width is specifically adjusted at transition regions. This localized modification maintains most of the simplicity of uniform design while precisely addressing manufacturing issues only where needed, at the interfaces with standard cells
3Productivity
If filler cells are used to fill dummy regions, then the integration density is improved, but transition regions due to width differences reduce device characteristics stability
Solution Approach 1:
The patent changes the width parameter of dummy active lines to match neighboring standard cell widths at transition regions. This parameter adjustment eliminates abrupt width changes that destabilize device characteristics, while maintaining the high integration density achieved through filler cell usage
Data Source
AI summary
A method of designing a layout of a semiconductor device includes forming a second layout by analyzing a first layout and correcting at least a portion of a plurality of filler cells, wherein the forming the second layout includes detecting transition regions due to a difference in width by respectively comparing a first width of a first active line and a second width of a second active line with a width of a dummy active line, in the first layout; and correcting the dummy active line of the first filler cell by analyzing the detected transition regions, wherein, in the correcting the dummy active line of the first filler cell, the dummy active line is corrected to be a corrected dummy active line having the same width as an active line having a narrower width, among the first and second active lines.