Film Forming Chamber Cleaning With Selective Etching Control
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Solution Overview
Problem
The existing cleaning methods for film forming apparatuses, which involve using hydrogen fluoride gas to remove reaction products, simultaneously alter the surface state of substrate processing regions, leading to prolonged coating processes and reduced productivity.
Innovation Solution
A cleaning method that differentiates between two types of films formed during the film forming process - a first film in the processing container and a second film in the source gas supply part, using a cleaning gas with an etching selection ratio greater than 1 to selectively remove the second film, followed by a surface control process to restore the original surface state.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a cleaning gas containing hydrogen fluoride is supplied to remove reaction products from both the gas introduction pipe and substrate processing regions simultaneously, then the cleaning effectiveness is improved, but the surface state of the substrate processing region changes and productivity deteriorates due to required coating process
Solution Approach 1:
The invention segments the cleaning target into two distinct parts: the gas introduction pipe (source gas supply part) and the substrate processing regions. By controlling the cleaning gas to selectively remove reaction products only from the gas introduction pipe while preserving those in the substrate processing regions, the method avoids the need for subsequent coating processes. This segmentation allows differential treatment of different areas, maintaining productivity while achieving effective cleaning where needed.
Solution Approach 2:
The invention applies local quality by creating different film types in different locations: a first film in the substrate processing regions and a second film in the gas introduction pipe. The cleaning gas is designed to have different etching effects on these films, selectively removing the second film while preserving the first film. This local differentiation enables targeted cleaning without affecting the substrate processing surfaces.
2Object-generated harmful factors
If a cleaning gas is supplied to remove adhered reaction products, then the accumulation of particles is reduced, but the surface state alteration requires additional coating time
Solution Approach 1:
The invention extracts the harmful reaction products specifically from the gas introduction pipe where they cause particle generation, while leaving the reaction products in the substrate processing regions intact. By taking out only the problematic deposits from the gas supply system and preserving the functional films on substrates, the method eliminates particle contamination without requiring time-consuming coating processes to restore surface states.
3Productivity
If simultaneous removal of reaction products from gas introduction pipe and substrate processing regions is performed, then cleaning efficiency is improved, but unnecessary film removal in substrate regions increases processing time
Solution Approach 1:
The invention utilizes parameter changes, specifically the etching selection ratio of the cleaning gas, to differentiate between the first film in substrate processing regions and the second film in the gas introduction pipe. By controlling the chemical parameters of the cleaning gas (such as hydrogen fluoride concentration and composition ratios), the method achieves selective etching that removes the second film efficiently while preserving the first film, thereby improving cleaning efficiency without increasing processing time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient removal of reaction products without altering the substrate surface state, thereby reducing the time required for coating processes and enhancing productivity by avoiding unnecessary film reformation.
Implementation Method 1
performing, after the film forming process, a cleaning process by supplying a cleaning gas having an etching selection ratio of the second film to the first film being greater than 1 from the source gas supply part into the processing container so as to etch and remove the second film deposited in the source gas supply part
Implementation Method 2
when the film forming gas is supplied into a processing container, the film forming gas undergoes a thermal reaction, a reaction product generated by the thermal reaction is deposited on the substrate, and a film is formed on the substrate
Data Source
AI summary
There is provided a method of cleaning a film forming apparatus conducted after a film forming process by supplying a source gas and a reaction gas to produce a reaction product into a processing container to form a film of the reaction product on a substrate. The method includes: controlling, in the film forming process, a first film deposited in the processing container and a second film deposited in a source gas supply part to become different kinds of films; performing, after the film forming process, a cleaning process by supplying a cleaning gas having an etching selection ratio of the second film to the first film being greater than 1 so as to etch and remove the second film; and performing, after the cleaning process, a surface control process of making a surface state of the first film close to a state before the cleaning process was performed.