Film Composite Switching Device Thermal Pressure Connection
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Solution Overview
Problem
Existing power semiconductor modules face limitations in current-carrying capacity and thermal connection due to direct pressure application, which reduces the effectiveness of internal connections and thermal conductivity.
Innovation Solution
A power electronics switching device with a substrate, power semiconductor component, connecting device as a film composite, and pressure device with a recessed pressure body, where the pressure element presses onto the film composite's surface, optimizing thermal and pressure connections using high-temperature-resistant materials and a thermally conductive paste for improved heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If direct pressure is applied to power semiconductor components, then thermal connection is improved, but current-carrying capacity is reduced due to limited bonding area
Solution Approach 1:
The patent introduces a substrate as an intermediary element between the power semiconductor component and the pressure device. The substrate provides a large-area bonding region that can be pressed against the cooling device, enabling effective thermal contact without applying direct pressure to the semiconductor component's bonding connections. This mediator approach allows thermal management while preserving electrical connection integrity.
2Temperature
If pressure elements press directly onto semiconductor components, then thermal conductivity is improved, but internal circuit connections are compromised
Solution Approach 1:
The patent segments the pressure application function from the semiconductor component by introducing a separate substrate structure. The pressure device presses onto the substrate's bonding area rather than directly onto the semiconductor component, dividing the system into distinct functional zones: one for electrical connection (semiconductor component) and one for thermal contact (substrate bonding area). This segmentation protects internal connections while achieving thermal conductivity.
3Reliability
If bonding connections are established at pressure points, then current-carrying capacity is maintained, but thermal pressure connection becomes impossible
Solution Approach 1:
The patent resolves this contradiction by transitioning to another dimension - using the substrate's extended bonding area (a different spatial dimension) to achieve thermal pressure connection. Instead of pressing at the semiconductor component's contact points, the substrate provides a broader bonding region that can be pressed against the cooling device, enabling thermal management without compromising the semiconductor's electrical connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the thermal pressure connection, increases the current-carrying capacity, and provides a more efficient heat transfer mechanism, ensuring optimal thermal conductivity and protection against environmental influences.
Implementation Method 1
the pressure element presses onto a section of the second main surface of film composite... optimal thermal pressure connection to a cooling device... improved heat dissipation... thermal conductivity
Data Source
AI summary
A switching device having a substrate, a power semiconductor component, a connecting device, load connection devices and a pressure device. Substrate has electrically insulated conductor tracks. A power semiconductor component is arranged on a conductor track. Connecting device is formed as a film composite having an electrically conductive film and an electrically insulating film, and has first and second main surfaces. Switching device is connected in an internally circuit-conforming manner by connecting device. The pressure device has a pressure body with a first recess, a pressure element being arranged so that it projects out of the recess, wherein the pressure element presses onto a section of the second main surface of film composite and, in this case, the section is arranged within the surface of the power semiconductor component in projection along the normal direction of the power semiconductor component.