Processing Container Replacement Timing From Film-Etch Balance
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Solution Overview
Problem
Existing substrate processing apparatuses face issues with over-etching of processing containers due to frequent cleaning, leading to accelerated replacement times based on cleaning cycles rather than actual film accumulation, which affects throughput efficiency.
Innovation Solution
A substrate processing apparatus equipped with a controller that calculates the difference between cumulative film thickness and estimated etching amount to determine the optimal replacement time of the processing container, allowing for accurate timing of maintenance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the processing container is cleaned for each support to remove accumulated film, then the film accumulation on supports is controlled, but the processing container is over-etched and replacement time is accelerated
Solution Approach 1:
The controller calculates the cumulative film thickness on the processing container inner wall and compares it with a threshold value to determine when cleaning is actually needed, rather than cleaning after every support usage. This feedback mechanism prevents unnecessary cleaning operations that cause over-etching.
Solution Approach 2:
Instead of performing full cleaning operations after every support usage (excessive action), the system performs cleaning only when the cumulative film thickness reaches a threshold (partial action), thereby avoiding unnecessary damage to the processing container while still maintaining film accumulation control.
2Productivity
If multiple supports are operated for one processing container to improve throughput, then substrate processing efficiency increases, but the frequency of cleaning operations increases leading to over-etching
Solution Approach 1:
The system tracks the cumulative film thickness on the processing container across multiple support operations and only triggers cleaning when the threshold is reached, allowing multiple supports to be processed without proportionally increasing cleaning frequency and thus preserving container lifespan while maintaining high throughput.
Solution Approach 2:
The controller preliminarily calculates the cumulative film thickness before initiating cleaning operations, allowing the system to plan cleaning schedules in advance based on actual accumulation rates rather than reacting to each individual support completion, thereby reducing unnecessary cleaning interruptions to throughput.
3Reliability
If cleaning operations are performed frequently to maintain processing container cleanliness, then film accumulation is controlled, but the replacement time of the processing container is accelerated
Solution Approach 1:
The system uses feedback from cumulative film thickness measurements to determine when cleaning is actually necessary, replacing cleaning operations from a fixed frequent schedule to a need-based schedule, thereby maintaining cleanliness reliability while reducing unnecessary cleaning cycles that accelerate replacement time.
Solution Approach 2:
The cleaning operation frequency is changed from a fixed parameter (cleaning after every support) to a dynamic parameter based on cumulative film thickness, allowing the system to maintain cleanliness standards while adapting cleaning frequency to actual contamination levels, thus extending processing container life.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise determination of processing container replacement, enhancing throughput by minimizing unnecessary replacements and extending the usable life of the container.
Implementation Method 1
a gas supplier configured to supply a processing gas depositing a deposit
Implementation Method 2
a gas supplier configured to supply a processing gas depositing a deposit, and a cleaning gas removing the deposit
Data Source
AI summary
A technique includes a substrate processing apparatus comprising: a processing container that processes a substrate; a gas supplier for supplying a processing gas depositing a deposit, and a cleaning gas removing the deposit into the processing chamber, a controller, wherein the controller is configured to control the gas supplier so as to perform, a predetermined times, processing including: (a) forming the deposit on the substrate and the inner side of the processing container; and (b) removing the deposit on the inner side of the processing container. The controller is configured to calculate a difference between a lifetime cumulative film thickness value, which is a cumulative value of a thickness of the deposit in (a), and a cumulative etching amount, which is an amount of a thickness of the deposit estimated to be removed in (b), and obtaining a replacement time of the processing container on the basis of the difference.