Film Formation Apparatus Cleaning Method for Semiconductor Reaction Tubes
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Solution Overview
Problem
Conventional film formation apparatuses for semiconductor processes face challenges in throughput and particle generation due to the need for heating the reaction tube to remove silicon-containing fluorides, which increases processing time and requires additional equipment, such as heaters, leading to inefficiencies and increased labor and costs.
Innovation Solution
A method and apparatus that perform a main cleaning process using a fluorine-containing gas to etch film formation by-products, followed by a post cleaning process that alternately supplies an oxidizing gas and hydrogen fluoride to transform and remove silicon-containing fluorides, improving the efficiency of cleaning without the need for heating the reaction tube, thereby enhancing throughput and reducing particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a gas containing fluorine is used as a cleaning gas to remove by-product films containing silicon, then the by-product films are removed effectively, but silicon-containing fluorides are generated and deposited on the inner surface of the reaction tube
Solution Approach 1:
An oxidizing gas is introduced as an intermediary substance to transform the harmful silicon-containing fluorides into a different chemical form that can be more easily removed. The oxidizing gas acts as a mediator that converts the difficult-to-remove fluorides into oxides that can then be cleaned away with standard cleaning procedures
Solution Approach 2:
The chemical state of the silicon-containing fluorides is changed by introducing an oxidizing gas, transforming them from a deposited固态 form into oxide compounds. This parameter change in chemical composition and state enables easier removal of the contaminants that were previously difficult to eliminate
2Object-generated harmful factors
If the reaction tube is heated to 100°C or more to vaporize and remove silicon-containing fluorides, then the fluorides are removed, but the processing time increases and additional heating equipment is required
Solution Approach 1:
The thermal heating system is replaced with a chemical cleaning system. Instead of using heat (thermal energy) to vaporize and remove the fluorides, the invention uses chemical reactions with oxidizing gas to transform and remove the contaminants at room temperature, eliminating the need for heating equipment and reducing processing time
Solution Approach 2:
An oxidizing gas is introduced as an intermediary to enable fluoride removal without heating. The oxidizing gas chemically reacts with the silicon-containing fluorides to form removable oxide compounds, providing a alternative pathway for contaminant removal that bypasses the need for thermal energy input
3Object-generated harmful factors
If the reaction tube is heated to remove silicon-containing fluorides, then the fluorides are vaporized and removed, but additional heating equipment and labor are required
Solution Approach 1:
The thermal heating system and associated equipment are replaced with a chemical cleaning system using oxidizing gas. This substitution eliminates the need for heaters, temperature control systems, and associated infrastructure, simplifying the device while maintaining effective fluoride removal capability
Solution Approach 2:
The oxidizing gas serves as an intermediary chemical agent that enables fluoride removal through chemical reaction rather than thermal vaporization. This approach eliminates the need for complex heating equipment and infrastructure, providing a simpler and more efficient cleaning method
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively removes silicon-containing fluorides and by-products from the reaction tube at room temperature, reducing processing time by 50% compared to conventional methods and eliminating the need for additional heating equipment, thus improving the overall efficiency and cost-effectiveness of the cleaning process.
Implementation Method 1
supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching the film formation by-product
Implementation Method 2
supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization
Implementation Method 3
supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product
Data Source
AI summary
A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product.