Film Formation Method for 3D Semiconductor Patterns
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, forming highly fine wiring patterns with complex three-dimensional structures is challenging due to non-uniform film deposition in high aspect ratio grooves, leading to unsuccessful pattern formation.
Innovation Solution
A film forming method involving a sequence of processes where a conformal first film and a second film are deposited on the processing target object, with the second film's thickness increasing away from the main surface, followed by selective etching using plasma to expose specific end surfaces, utilizing organic-containing aminosilane-based gases and fluorocarbon-based gases to achieve uniformity and control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional film deposition is used in high aspect ratio grooves, then film formation is attempted, but non-uniform film thickness is generated leading to unsuccessful pattern formation
Solution Approach 1:
The patent applies local quality by making the film thickness vary according to the position on the substrate. Specifically, the film thickness is made thicker at the peripheral portion compared to the central portion, which compensates for the non-uniform deposition in high aspect ratio grooves and achieves successful pattern formation.
2Area of stationary object
If film deposition is performed on complex three-dimensional patterns, then coverage is attempted, but deposit generation occurs in high aspect ratio regions causing formation failure
Solution Approach 1:
The patent uses local quality to address deposit generation in high aspect ratio grooves by varying the film thickness locally. The peripheral regions receive thicker film deposition, which prevents deposit accumulation issues in the grooves and ensures reliable pattern formation across the entire substrate area.
3Ease of manufacture
If uniform film thickness is formed on all surfaces, then simplicity is maintained, but selective exposure of different end surfaces cannot be achieved
Solution Approach 1:
The patent applies local quality by forming films with different thicknesses at different locations. The first film is formed with a first thickness and the second film with a second thickness greater than the first, enabling selective exposure of specific end surfaces while maintaining a relatively simple two-step film formation process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables successful formation of three-dimensional patterns by ensuring uniform film thickness and selective exposure of end surfaces, enhancing the precision and effectiveness of semiconductor manufacturing.
Implementation Method 1
Through the fifth process, the reaction precursor of the silicon can be formed by using the first gas containing the monoaminosilane
Implementation Method 2
The second gas contains oxygen atoms
Implementation Method 3
The second process comprises a tenth process of generating plasma of a sixth gas in the space in which the processing target object is placed; and an eleventh process of etching, by the plasma of the sixth gas, the film formed through the first process
Data Source
AI summary
A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.