Film Formation Method for Silicon Substrate Surface Preparation
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Solution Overview
Problem
Conventional film forming methods face issues with incomplete removal of oxide films and surface roughness deterioration due to organic substance adherence on silicon films, leading to abnormal growth and poor film quality.
Innovation Solution
A film forming method involving an organic substance removal step using hydrogen-containing and oxygen-containing gases, followed by oxide film removal and subsequent film formation, utilizing a substrate processing apparatus with controlled gas supply and temperature management to ensure clean surface preparation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a gas containing a halogen element and a basic gas is used to remove the oxide film, then the oxide film removal is achieved, but organic substance adhesion remains and causes incomplete removal and surface roughness deterioration
Solution Approach 1:
The patent divides the film formation process into three distinct steps: (1) organic substance removal step using hydrogen-containing gas and oxygen-containing gas, (2) oxide film removal step using halogen-containing gas and basic gas, and (3) film formation step. This segmentation ensures that organic substances are removed first, preventing them from interfering with the subsequent oxide film removal process, thereby achieving complete oxide film removal and good surface roughness.
Solution Approach 2:
The patent performs preliminary removal of organic substances before removing the oxide film. By conducting the organic substance removal step first using hydrogen-containing gas and oxygen-containing gas, the surface is prepared in advance to ensure complete oxide film removal in the subsequent step, preventing abnormal growth and surface roughness deterioration.
2Device complexity
If organic substances are not completely removed before oxide film removal, then the process is simpler, but abnormal growth and surface roughness deterioration occur
Solution Approach 1:
The patent segments the process into three distinct steps with different gas compositions: (1) organic substance removal using hydrogen-containing gas and oxygen-containing gas, (2) oxide film removal using halogen-containing gas and basic gas, and (3) film formation. This segmentation, while adding process steps, ensures complete removal of both organic substances and oxide films, achieving good surface roughness and preventing abnormal growth.
Solution Approach 2:
The patent performs preliminary removal of organic substances using hydrogen-containing gas and oxygen-containing gas before the oxide film removal step. This preliminary action ensures that the surface is clean and free of organic contaminants, enabling complete oxide film removal and achieving good surface roughness in the subsequent film formation process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively removes organic substances and oxide films, resulting in improved surface roughness and quality of the formed films, preventing pattern collapse and ensuring consistent film formation.
Implementation Method 1
an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base
Implementation Method 2
a film forming method in which an oxide film produced on the surface of a silicon film is removed using a gas containing a halogen element and a basic gas
Data Source
AI summary
There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.