Film-Forming Composition for EUV Resist Underlayer Adhesion and Etching
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Solution Overview
Problem
In the semiconductor industry, there is a challenge in achieving a resist underlayer film that exhibits favorable adhesion to EUV resist and high etching processability, particularly in EUV lithographic processes, where there is a trade-off between improving lithographic properties and achieving a high etching rate due to the addition of organic components.
Innovation Solution
A film-forming composition comprising a combination of hydrolysis condensates of hydrolyzable silane compounds prepared under basic and acidic catalyst conditions, which form a thin film that prevents pattern collapse and enhances dry etching selectivity, thereby addressing the adhesion and etching processability issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large amount of organic component (functional groups and photoacid generator) is added to improve lithographic properties, then adhesion to resist and resolution are improved, but etching rate decreases
Solution Approach 1:
The invention changes the chemical composition parameters of the underlayer film by incorporating specific silicon-containing compounds with controlled organic content. The formula specifies silicon-containing compounds with Si:O ratio of 1:1 to 1:3 and controlled organic group content, transforming the film's chemical properties to achieve both good adhesion and acceptable etching rate without requiring excessive organic additives
Solution Approach 2:
The invention creates a composite underlayer film containing silicon-containing compounds, oxygen-containing organic groups, and controlled photoacid generator content. This composite structure combines the benefits of inorganic silicon oxide network (for etching rate) with organic functional groups (for adhesion and lithographic properties), resolving the trade-off between these conflicting requirements
2Manufacturing precision
If resist film is thinned to improve resolution and prevent pattern collapse, then finer patterning is achieved, but sufficient mask function becomes difficult to obtain
Solution Approach 1:
The invention introduces a silicon-containing underlayer film as an intermediary between the thinned resist and the substrate. This underlayer serves as a mediator that provides the necessary mask function and structural support, allowing the resist to be thinner while maintaining sufficient overall masking capability during etching
Solution Approach 2:
The invention segments the masking function between two distinct layers: the thinned resist layer (providing pattern definition) and the silicon-containing underlayer film (providing enhanced mask function and structural support). This segmentation allows each layer to be optimized for its specific function, enabling finer patterning while maintaining adequate mask performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition forms a thin film with favorable adhesion to the resist and high etching processability, preventing pattern collapse and achieving high transferability to the underlying substrate, while maintaining improved lithographic properties.
Implementation Method 1
a film-forming composition comprising a hydrolysis condensate (A) of a hydrolyzable silane compound produced in the presence of a basic hydrolysis catalyst, a hydrolysis condensate (B) of a hydrolyzable silane compound produced in the presence of an acidic hydrolysis catalyst
Data Source
AI summary
A film-forming composition is suitable as a resist underlayer film-forming composition capable of forming a resist underlayer film that exhibits favorable adhesion to an EUV resist and favorable etching processability. A film-forming composition includes: a hydrolysis condensate (A) of a hydrolyzable silane compound produced in the presence of a basic hydrolysis catalyst; a hydrolysis condensate (B) of a hydrolyzable silane compound produced in the presence of an acidic hydrolysis catalyst; and a solvent.