High Aspect Ratio Film Step Coverage via Halogenated Precursor
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Solution Overview
Problem
Existing film deposition processes, such as vapor deposition, often result in non-uniform films due to self-decomposition of metal precursor sources and insufficient diffusion or dosage, leading to poor step coverage, especially on high aspect ratio structures.
Innovation Solution
A method involving exposing a substrate with high aspect ratio structures to a first precursor gas, followed by flowing a feed gas with at least 1% by volume of N2 to an ozone generator to produce a second precursor gas, which is then used to form a film with improved step coverage of at least 90%.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If vapor deposition processes are used to deposit films, then film deposition can be achieved, but non-uniform film deposition occurs due to self-decomposition of metal precursor sources and insufficient diffusion
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by introducing a halogenated precursor (such as CF4, C2F6, or CF3OH) and controlling the ratio of halogenated precursor to metal precursor. This parameter change enables better control over film composition and uniformity, resolving the issue of non-uniform deposition while maintaining step coverage.
Solution Approach 2:
The halogenated precursor acts as an intermediary substance that facilitates the deposition process. It mediates between the metal precursor and the substrate, enabling controlled reaction and improving both film uniformity and step coverage by providing intermediate reaction steps that enhance mass transport and reaction control.
2Productivity
If metal precursor sources are used in vapor deposition, then film formation is achieved, but self-decomposition occurs leading to non-uniform films
Solution Approach 1:
The halogenated precursor serves as an intermediary that controls the decomposition process of the metal precursor. It provides a controlled reaction environment that prevents uncontrolled self-decomposition, thereby maintaining film uniformity while preserving deposition productivity.
Solution Approach 2:
By adjusting the ratio and type of halogenated precursor used, the patent changes the chemical parameters to control the decomposition rate and uniformity of film formation, preventing non-uniform deposition while maintaining efficient productivity.
3Quantity of substance
If co-reactants are used in vapor deposition, then film deposition can proceed, but decomposition on film surfaces occurs leading to poor step coverage
Solution Approach 1:
The patent changes the chemical parameters by using halogenated precursors with specific ratios to metal precursors. This parameter optimization controls the reaction dynamics on film surfaces, preventing excessive decomposition and improving step coverage while maintaining appropriate co-reactant dosage.
Solution Approach 2:
The halogenated precursor acts as an intermediary that moderates the reaction between co-reactants and the substrate. It provides controlled reaction pathways that prevent uncontrolled decomposition on film surfaces, thereby improving step coverage while maintaining effective co-reactant utilization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described method achieves significant improvement in step coverage, ensuring that the film thickness on high aspect ratio structures is consistently at least 90%, while maintaining low concentrations of hydrogen and carbon impurities.
Implementation Method 1
flowing a feed gas comprising at least 1% by volume of N2 based on a total volume of the feed gas, to an ozone generator to produce a second precursor gas
Implementation Method 2
exposing the substrate to the second precursor gas to form, on the at least one structure of the substrate, a film
Data Source
AI summary
A device is provided. The device comprises a substrate having at least one structure with an aspect ratio of at least 10:1. The device comprises a film located on the at least one structure with a step coverage of at least 90%. The film comprises a metal oxide or metalloid oxide; and a concentration of less than 1×1020 hydrogen atoms per cubic centimeter as measured by SIMS. Methods for forming films on substrates and related systems and methods are also provided herein.