Plasma Thermal Processing Chamber With Filtered Plasma and Wafer Heating
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor processing technologies require separate apparatuses for plasma and thermal processing, leading to increased manufacturing cycle time and cost, as well as challenges in accurately measuring and controlling workpiece temperatures during sequential or simultaneous processing steps.
Innovation Solution
A processing apparatus that integrates both plasma and thermal processing capabilities within a single chamber, utilizing a plasma chamber with a separation grid to filter charged particles, radiative heating sources for temperature control, and a temperature measurement system to accurately determine workpiece temperatures at the center and perimeter.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate processing apparatuses are used for plasma processing and thermal processing, then each processing step can be performed with dedicated equipment, but manufacturing cycle time increases and manufacturing cost increases
Solution Approach 1:
The patent combines plasma processing and thermal processing into a single integrated apparatus. The processing chamber houses both the plasma source (inductively coupled plasma coil) and thermal processing components (heating lamps, workpiece support), allowing both processing types to occur in the same chamber without requiring separate apparatuses, thereby reducing manufacturing cycle time while maintaining processing quality
Solution Approach 2:
The processing chamber is designed to perform multiple functions: it can conduct plasma processing, thermal processing, and rapid thermal processing sequentially or simultaneously. The workpiece support structure and heating system are configured to enable the chamber to serve as a universal processing environment for different semiconductor manufacturing steps
2Reliability
If separate processing apparatuses are used for plasma processing and thermal processing, then each processing step can be performed with dedicated equipment, but manufacturing cost increases
Solution Approach 1:
The patent combines plasma processing and thermal processing into a single integrated apparatus. The processing chamber houses both the plasma source (inductively coupled plasma coil) and thermal processing components (heating lamps, workpiece support), allowing both processing types to occur in the same chamber without requiring separate apparatuses, thereby reducing manufacturing cycle time while maintaining processing quality
Solution Approach 2:
The processing chamber is designed to perform multiple functions: it can conduct plasma processing, thermal processing, and rapid thermal processing sequentially or simultaneously. The workpiece support structure and heating system are configured to enable the chamber to serve as a universal processing environment for different semiconductor manufacturing steps
3Manufacturing precision
If workpiece temperature is measured during thermal processing, then temperature control accuracy can be improved, but measurement precision is challenged by lamp radiation interference
Solution Approach 1:
The patent introduces a dielectric window as an intermediary component between the heating lamps and the workpiece. This window is transparent to the wavelength range used for temperature measurement, allowing the temperature measurement system to accurately detect workpiece temperature without interference from lamp radiation, thereby maintaining both temperature control accuracy and measurement precision
Solution Approach 2:
The patent employs a non-contact optical temperature measurement system (pyrometer or infrared sensor) that measures temperature through radiation detection. This replaces contact-based measurement methods and, when combined with the dielectric window, enables accurate temperature measurement during lamp-based thermal processing by filtering out interfering radiation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integrated approach reduces manufacturing cycle time and cost, while enabling precise temperature control and measurement, enhancing processing efficiency and accuracy.
Implementation Method 1
a plasma source configured to generate a plasma from the one or more process gases in the plasma chamber
Implementation Method 2
one or more radiative heating sources configured on a second and opposite side of the first side of the processing chamber, the one or more radiative heating sources configured to heat the workpiece from the back side of the workpiece
Implementation Method 3
a dielectric window disposed between the workpiece support and the one or more radiative heating sources
Data Source
AI summary
An apparatus for combining plasma processing and thermal processing of a workpiece is presented. The apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. A quartz workpiece support is disposed within the processing chamber, the workpiece support configured to support a workpiece. One or more radiative heat sources configured to heat the workpiece are disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. In addition, the apparatus includes a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece.