Semiconductor Fin Bipolar Transistor With Asymmetric Emitter-Collector Widths
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Solution Overview
Problem
Conventional integrated circuits employing vertical bipolar transistors are costly and may not meet certain operational constraints, while semiconductor fins, traditionally used for field effect transistors, are considered incompatible with bipolar transistor operation.
Innovation Solution
A bipolar transistor structure is formed on a semiconductor fin with distinct doping types and widths for emitter/collector materials, allowing for a semiconductor fin to be subdivided into portions with varying dopant concentrations and E/C material widths, enabling the creation of a bipolar transistor compatible with semiconductor fin technology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vertical bipolar transistors are used in conventional integrated circuits, then certain operational parameters are achieved, but manufacturing cost increases and compatibility with existing CMOS devices decreases
Solution Approach 1:
The bipolar transistor is segmented into distinct regions along the semiconductor fin structure, with the emitter and collector formed on opposite sidewalls. This segmentation allows the bipolar transistor to be integrated alongside CMOS devices in the same planar layout, reducing manufacturing complexity and cost while maintaining operational performance
Solution Approach 2:
The invention transitions from conventional planar bipolar transistor layouts to a vertical configuration utilizing the third dimension (height) of the semiconductor fin. By forming emitter and collector regions on opposite sidewalls of a vertical fin structure, the design achieves compact integration with CMOS devices while preserving bipolar transistor operational characteristics
2Productivity
If semiconductor fins are used for field effect transistors, then device density is improved, but compatibility with bipolar transistor operation is lost
Solution Approach 1:
The semiconductor fin structure is designed to serve multiple functions: it provides the high-density vertical architecture needed for modern scaling while simultaneously enabling bipolar transistor operation through the formation of emitter and collector regions on opposite sidewalls. This multi-functionality allows a single fin structure to support both high density and bipolar transistor compatibility
Solution Approach 2:
The semiconductor fin is configured with asymmetric doping profiles, where the first portion has a first doping type and the second portion has a second doping type. This asymmetry enables the formation of npn or pnp bipolar transistor structures on opposite sidewalls, allowing the symmetric-looking fin structure to function asymmetrically for bipolar operation while maintaining high device density
Data Source
AI summary
Embodiments of the disclosure provide a bipolar transistor structure including a semiconductor fin on a substrate. The semiconductor fin has a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. A first emitter/collector (E/C) material is adjacent a first sidewall of the semiconductor fin along the width of the semiconductor fin. The first E/C material has a second doping type opposite the first doping type. A second E/C material is adjacent a second sidewall of the semiconductor fin along the width of the semiconductor fin. The second E/C material has the second doping type. A width of the first E/C material is different from a width of the second E/C material.