Semiconductor Fin Bipolar Transistor With Gate-Controlled Base Resistance
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Solution Overview
Problem
Conventional integrated circuits employing vertical bipolar transistors or silicon germanium (SiGe) bipolar transistors face higher costs and operational parameters that do not meet certain constraints, particularly in the context of atomic level scaling of micro-devices such as logic gates and field effect transistors.
Innovation Solution
A semiconductor fin structure is developed, featuring an intrinsic base region, an extrinsic base region, a collector, an emitter, and a gate structure, where the intrinsic base region is horizontally positioned between the emitter and collector, with a dielectric block between the emitter and collector to prevent interference, allowing for active control of electrical resistance through the base of the bipolar transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vertical bipolar transistors or SiGe bipolar transistors are used in conventional integrated circuits, then operational parameters can be achieved, but manufacturing cost increases and device scaling becomes difficult
Solution Approach 1:
The patent transitions from conventional vertical bipolar transistors to a lateral bipolar transistor configuration where the base region extends horizontally between emitter and collector contacts on the same surface. This dimensional change enables standard planar fabrication processes to be used, reducing manufacturing complexity and cost while maintaining device performance
Solution Approach 2:
The base region is divided into intrinsic and extrinsic portions, with the intrinsic base horizontally positioned between emitter and collector. This segmentation allows for optimized carrier transport in the intrinsic region while providing contact access in the extrinsic region, achieving good operational parameters with simpler fabrication
2Reliability
If vertical bipolar transistors are used, then operational parameters can be achieved, but device scaling to atomic level becomes difficult
Solution Approach 1:
By reconfiguring the transistor from vertical to lateral geometry, all critical dimensions (emitter-base spacing, base width, collector depth) can be controlled using standard planar lithography and deposition techniques, enabling consistent scaling to smaller dimensions comparable with existing CMOS fabrication capabilities
Solution Approach 2:
The intrinsic base region is positioned locally between emitter and collector with specific dimensional control, allowing optimization of carrier injection and collection efficiency at each interface while maintaining overall device scalability
3Ease of operation
If a gate structure is added on the semiconductor fin, then electrical resistance control is improved, but device complexity increases
Solution Approach 1:
The gate structure formed on the semiconductor fin serves multiple functions: it provides electrical resistance control through the base region, acts as a control terminal for current modulation, and integrates with the existing lateral bipolar transistor structure. This multi-functionality justifies the added structural element while improving device operability
Solution Approach 2:
The gate structure is integrated with the semiconductor fin and base region formation process, combining what could be separate fabrication steps into a unified structure. The gate contacts the base region directly, merging control functionality with the transistor's inherent structure
Data Source
AI summary
Embodiments of the disclosure provide a bipolar transistor and gate structure on a semiconductor fin and methods to form the same. A structure according to the disclosure includes a semiconductor fin including an intrinsic base region and an extrinsic base region adjacent the intrinsic base region along a length of the semiconductor fin. Sidewalls of the intrinsic base region of the semiconductor fin are adjacent an emitter and a collector along a width of the semiconductor fin. A gate structure is on the semiconductor fin and between the intrinsic base region and the extrinsic base region.