Fin-Structure Bipolar Transistor and Diode Integration
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Solution Overview
Problem
The miniaturization of semiconductor components poses challenges in integrating non-planar Fin-FETs with other semiconductor structures like diodes and bipolar junction transistors, as the forming method for Fin-FETs is more complex and difficult to integrate with conventional planar FET forming methods.
Innovation Solution
The formation of doped layers below and surrounding epitaxial structures in fin structures for bipolar junction transistors and diodes, which are connected to improve electrical performance and simplify integration with Fin-FET processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Fin-FET forming method is used to achieve high drive current and lessen short channel effect, then device performance is improved, but device complexity and difficulty of integration increase
Solution Approach 1:
The patent merges the formation processes of Fin-FETs with other semiconductor structures (diodes, BJTs) by using common epitaxial growth and doping techniques. The fin structures serve as a shared foundation for multiple device types, allowing concurrent formation rather than separate processing sequences.
Solution Approach 2:
The fin structures are designed to serve multiple functions: they provide the three-dimensional geometry needed for high-performance Fin-FETs, while simultaneously serving as the structural basis for diodes and bipolar junction transistors. This multi-functionality allows a single fin formation process to support diverse device architectures.
2Reliability
If Fin-FET forming method is used to achieve high drive current and lessen short channel effect, then device performance is improved, but ease of manufacture decreases
Solution Approach 1:
The fin structures are formed preliminarily before the specific device regions are defined. This preliminary fin formation creates a uniform three-dimensional substrate that simplifies subsequent processing steps for creating different device types, as the complex 3D geometry is already in place rather than needing to be created separately for each device.
Solution Approach 2:
While maintaining uniform fin structures across the substrate, the patent applies local variations in doping concentrations and epitaxial growth conditions to create different device regions. This allows standard fin formation to be combined with localized modifications to produce diverse device characteristics.
3Manufacturing precision
If doped layers are formed below and surrounding epitaxial structures in fin structures and connected, then uniformity of base width distribution is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent extends the doping process from traditional planar (2D) implantation into the fin structures (3D). By forming doped layers that surround and connect below the epitaxial structures in the vertical dimension, the process achieves uniform base width distribution throughout the three-dimensional fin geometry.
Solution Approach 2:
The doped layers are nested within and surrounding the epitaxial structures in a concentric arrangement. This nested configuration ensures that the doping uniformly penetrates the base region from multiple directions, achieving consistent base width distribution while using a single integrated doping step.
Data Source
AI summary
A bipolar junction transistor (BJT) and a diode including fin structures are provided in the present invention. In the BJT and the diode of the present invention, first doped layers are formed in a first fin and below first epitaxial structures in the first fin, and the first doped layers are connected with one another for improving related electrical performance of the BJT and the diode including fin structures.