Fin Capacitor Structure Without High Dopant Implantation
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Solution Overview
Problem
High concentrations of dopants in MOS capacitors on fin structures lead to dielectric layer breakdown and damage to the fin structure, making it difficult to maintain stable capacitance across varying voltages.
Innovation Solution
A capacitor on a fin structure is fabricated using a dielectric layer that covers the fin, with a first electrode extension embedded within and a second electrode formed within the dielectric layer, where the capacitor dielectric layer surrounds the second electrode, eliminating the need for high dopant implantation and preventing dielectric layer breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If high concentration of dopants is implanted in the substrate to maintain stable capacitance, then capacitance stability is improved, but the capacitor dielectric layer is more likely to break down and the fin structure is damaged
Solution Approach 1:
The capacitor structure is segmented into distinct regions: a first electrode extension embedded in the fin structure, a dielectric layer covering the fin structure, and a capacitor dielectric layer within the dielectric layer surrounding a second electrode. This segmentation allows capacitance formation without requiring high dopant concentration in the entire fin structure, thus maintaining capacitance stability while preventing dielectric layer breakdown
Solution Approach 2:
The invention applies local quality by creating a first electrode extension with specific electrical properties embedded only in the capacitor region of the fin structure, rather than doping the entire fin structure. This localized approach provides the necessary electrical characteristics for stable capacitance while avoiding damage to the overall fin structure and dielectric layer
2Stability of the object's composition
If high concentration of dopants is implanted in the fin structure to maintain stable capacitance, then capacitance stability is improved, but the fin structure is damaged
Solution Approach 1:
The capacitor is segmented into a first electrode extension embedded in the fin structure and a second electrode separated by a capacitor dielectric layer. This segmentation eliminates the need for high dopant concentration in the fin structure, thereby maintaining fin structure integrity while achieving stable capacitance through the capacitor's inherent design
Solution Approach 2:
The first electrode extension is locally embedded in the fin structure at the capacitor region, providing the necessary electrical connection without requiring high dopant concentration throughout the fin structure. This localized approach preserves the mechanical strength and structural integrity of the fin structure while enabling stable capacitance
Data Source
AI summary
A capacitor on a fin structure includes a fin structure. A dielectric layer covers the fin structure. A first electrode extension is embedded within the fin structure. A first electrode penetrates the dielectric layer and contacts the first electrode extension. A second electrode and a capacitor dielectric layer are disposed within the dielectric layer. The capacitor dielectric layer surrounds the second electrode, and the capacitor dielectric layer is between the second electrode and the first electrode extension.