Fin Cut Process for Semiconductor Structure Critical Dimension Control
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Solution Overview
Problem
The miniaturization of semiconductor devices poses challenges in forming fin-shaped structures with precise critical dimensions, as the narrowing width and shrinking spacing between these structures make it difficult to control the manufacturing process effectively, leading to errors in the removal of fin structures during etching processes.
Innovation Solution
A method involving a first fin cut process followed by a second fin cut process, where the second fin cut process modifies the edge region of the first fin cut region to improve the critical dimension control, ensuring more precise removal of fin structures and enhancing the quality of semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single fin cut process is used to remove fin structures, then the manufacturing process is simple, but the critical dimension control is poor and edge regions are rough
Solution Approach 1:
The fin cut process is divided into two distinct stages: a first fin cut process that removes the majority of fin structures, and a second fin cut process that refines the edge regions. This segmentation allows each process to be optimized independently - the first process for efficiency and the second for precision - thereby achieving better critical dimension control without requiring the entire process to be overly complex
Solution Approach 2:
The first fin cut process is performed as a preliminary action to remove the bulk of fin structures before the second fin cut process refines the edges. By performing the rough cutting first, the second process can focus specifically on achieving precise critical dimensions and smooth edge regions, improving overall manufacturing precision while maintaining reasonable process complexity
2Productivity
If the width of fin structures is narrowed for miniaturization, then device density increases, but the difficulty of controlling fin structure formation increases
Solution Approach 1:
The patent applies different cutting approaches to different regions of the substrate: the first fin cut process handles the central regions where fin structures are removed in bulk, while the second fin cut process specifically targets the edge regions to achieve precise critical dimensions. This local differentiation allows narrow fin structures to be formed with controlled precision at the edges while maintaining high device density in the overall array
3Productivity
If the spacing between fin structures is shrunk for miniaturization, then more fins fit in the same area, but errors in fin structure removal increase
Solution Approach 1:
By segmenting the fin cut process into two stages, the patent can handle closely spaced fin structures more effectively. The first process removes fins in the central regions with relaxed precision requirements, while the second process specifically addresses the edge regions where precise spacing control is critical, thereby reducing removal errors even when fins are densely packed
Solution Approach 2:
The first fin cut process acts as an intermediary step that prepares the structure for the second fin cut process. By removing the majority of fins first, it creates a configuration where the second process can more accurately target and remove remaining fins with precise spacing, reducing errors in fin structure removal while maintaining high density
Data Source
AI summary
A manufacturing method for forming a semiconductor structure includes: first, a plurality of fin structures are formed on a substrate and arranged along a first direction, next, a first fin cut process is performed, so as to remove parts of the fin structures which are disposed within at least one first fin cut region, and a second fin cut process is then performed, so as to remove parts of the fin structures which are disposed within at least one second fin cut region, where the second fin cut region is disposed along at least one edge of the first fin cut region.