Semiconductor Fin Dehydration via Solid-to-Vapor Phase Transition
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Solution Overview
Problem
High aspect ratio fin structures in semiconductor wafers are prone to damage and pattern collapse during dehydration due to residual moisture and surface tension, leading to defects that cannot be effectively recovered.
Innovation Solution
A method involving the formation of hydrophobic surfaces on the wafer, followed by the use of a liquid agent that is cooled and solidified within the fin structures, allowing for dehydration by vaporization without passing through an intermediate liquid phase, thereby reducing the impact of surface tension and preventing pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high speed spinning is used to remove residual moisture, then dehydration efficiency is improved, but fin structures are damaged due to surface tension
Solution Approach 1:
The patent uses phase transition by cooling the liquid agent to solidify it within the fin structures, then transforming it to vapor for dehydration. This avoids the liquid phase that causes surface tension damage during high-speed spinning, while still achieving effective moisture removal through the solid-to-vapor transition process.
Solution Approach 2:
The patent replaces the mechanical spinning system with a thermal phase transition system. Instead of using centrifugal force from high-speed rotation to remove moisture, the invention uses controlled cooling and heating to transform a liquid agent through solid and vapor phases, eliminating mechanical stress on fragile fin structures.
2Reliability
If conventional dehydration processes are used, then moisture removal is achieved, but pattern collapse occurs due to surface tension
Solution Approach 1:
The patent employs phase transitions by transforming the liquid agent into solid form within the fin structures through cooling, then into vapor form for moisture removal. This phase transition approach eliminates the need for liquid-phase dehydration that causes surface tension-induced pattern collapse, while maintaining effective moisture removal.
Solution Approach 2:
The patent changes the physical state parameters of the dehydration agent from liquid to solid and then to vapor through controlled temperature changes. This parameter transformation allows moisture removal without the harmful surface tension effects that occur when liquid agents are used in conventional dehydration processes.
3Reliability
If liquid agents are used in fin structures, then dehydration is achieved, but surface tension causes pattern deflection
Solution Approach 1:
The patent uses phase transitions to transform the agent from liquid to solid and then to vapor. By avoiding the liquid phase during the critical dehydration stage, the method eliminates surface tension forces that cause pattern deflection, while still achieving effective moisture removal through the solid-to-vapor transition.
Solution Approach 2:
The patent replaces the liquid-phase mechanical action with a thermal phase transition mechanism. Instead of using liquid agents that exert surface tension on fin structures, the invention uses controlled heating to transform solidified agent directly to vapor, eliminating mechanical stress while maintaining dehydration effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively removes residual moisture from the wafer surfaces while minimizing damage to the fin structures, ensuring the integrity of the semiconductor substrate during dehydration.
Implementation Method 1
solidifying the agent
Implementation Method 2
dehydrating a surface in the trench by transforming the agent from solid form to vapor form
Implementation Method 3
the formation of hydrophobic surfaces on the wafer
Data Source
AI summary
The present disclosure provides a method for dehydrating a semiconductor structure, including providing a semiconductive substrate, forming a trench on the semiconductive substrate, dispensing an agent in liquid form into the trench, solidifying the agent, and dehydrating a surface in the trench by transforming the agent from solid form to vapor form.