Fin-Based Diode Layout for Wafer Space Utilization
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Solution Overview
Problem
As integrated circuit sizes shrink, there is a need for new layout designs for diode structures to conserve space on wafers and accommodate more devices within smaller areas, as conventional layouts are inefficient in utilizing space.
Innovation Solution
The proposed solution involves forming first and second gate structures parallel to each other, with vertically extending fins between them, and a contact structure laterally arranged between the gates, achieved through epitaxial growth of semiconductor material and careful patterning and isolation techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional diode layout is used, then fabrication process is simple, but wafer space utilization is poor
Solution Approach 1:
The patent transitions from a conventional planar diode layout to a three-dimensional fin-based structure. Multiple fins extend vertically from the substrate between parallel gate structures, utilizing the vertical dimension to increase device density without occupying additional lateral wafer space. This dimensional transition enables compact integration while maintaining fabrication compatibility.
2Productivity
If fins are placed between gate structures, then device density increases, but manufacturing precision requirements increase
Solution Approach 1:
The fin structures are formed prior to the deposition and patterning of gate materials. This preliminary formation establishes precise spatial references that guide subsequent gate alignment. The fins serve as pre-positioned structures that define the operational region, enabling accurate placement of multiple parallel gate structures without requiring ultra-precise alignment during later fabrication steps.
Solution Approach 2:
The fin structures themselves serve as self-aligned references for gate placement. The gates are positioned relative to the fins through self-aligned patterning techniques, where the fin geometry and position automatically define the gate locations. This self-service approach eliminates the need for separate alignment markings or complex lithographic alignment procedures.
3Area of stationary object
If contact structure is laterally arranged between gates, then space efficiency improves, but manufacturing complexity increases
Solution Approach 1:
The contact structure fabrication is merged with the gate structure fabrication processes. The same lithographic patterning steps that define the gate structures also define the contact structure regions. Material deposition and etching processes used for gate formation are simultaneously used to create the contact structures, eliminating separate fabrication sequences and reducing overall process complexity despite the three-dimensional layout.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a more compact and efficient diode structure layout, enabling increased device density on wafers while maintaining effective semiconductor material growth and conductivity, thus addressing the space constraints in modern semiconductor fabrication.
Implementation Method 1
epitaxially growing a semiconductor material from the first fin and the second fin after the gate material layer is patterned
Data Source
AI summary
Diode structures and methods of fabricating diode structures. First and second gate structures are formed with the second gate structure arranged parallel to the first gate structure. First and second fins are formed that extend vertically from a top surface of a substrate. The first and second fins are arranged between the first gate structure and the second gate structure. A contact structure is coupled with the first fin and the second fin. The contact structure is laterally arranged between the first gate structure and the second gate structure.