Fin Active and Field Gate Core Integration in Semiconductor Devices
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor device fabrication methods face challenges in efficiently forming and integrating fin active regions and gate cores, particularly in creating precise recesses and insulation layers to enable effective fin active cutting and gate cutting processes.
Innovation Solution
A method involving the formation of sacrificial gate patterns, interlayer insulating layers, and selective etching to create recesses for insulation material deposition, followed by the formation of fin active and field gate cores, and subsequent patterning of gate and fin gate electrodes, allowing for the integration of fin active and field gate cores with coplanar surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional fin active cutting and gate cutting processes are used, then gate electrodes and fin active regions can be removed at predetermined locations, but the fabrication process becomes complex and time-consuming with multiple separate steps
Solution Approach 1:
The patent combines the fin active cutting process and gate cutting process into a single unified process. By forming a combined mask pattern that covers both the fin active region and gate electrode simultaneously, both cutting operations are performed in one etching step, eliminating the need for separate masking and etching steps for each structure.
Solution Approach 2:
The patent forms the combined mask pattern in advance before performing the cutting operation. The mask pattern is designed to define both the fin active region boundaries and gate electrode removal areas, allowing the etching process to create both cuts simultaneously based on pre-planned locations.
2Manufacturing precision
If separate fin active cutting and gate cutting processes are performed, then precise removal can be achieved, but the manufacturing time and process steps increase significantly
Solution Approach 1:
The patent merges multiple cutting operations into a single process step by using a unified mask pattern that defines all cutting locations for both fin active regions and gate electrodes. This allows simultaneous etching of multiple structures with the same precision that would be achieved through separate steps, but in one operation.
Solution Approach 2:
The combined mask pattern serves multiple functions: it defines the boundaries of fin active regions, identifies gate electrode removal areas, and establishes alignment references for subsequent processing steps. This multi-functional mask eliminates the need for multiple specialized masks.
3Manufacturing precision
If multiple separate cutting steps are used, then each structure can be precisely controlled, but the alignment accuracy between different cut zones may vary
Solution Approach 1:
The patent forms all cutting zones (fin active cut zones and gate cut zones) in a single etching step using the same mask pattern and etching conditions. This ensures that all cuts are made with identical alignment accuracy relative to the mask features, eliminating cumulative alignment errors that would arise from multiple separate steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication process, enhances the integration of fin active and field gate structures, and enables self-aligned contact formation, improving the overall efficiency and precision of semiconductor device manufacturing.
Implementation Method 1
forming a field gate cut zone including a first recess exposing a surface of the isolation region by removing a first portion of the sacrificial field gate pattern and a fin active cut zone including a second recess exposing a surface of the fin active region by removing a first portion of the sacrificial fin gate pattern
Implementation Method 2
forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively
Implementation Method 3
forming a base insulating layer between the fin active region and the sacrificial fin gate pattern using a deposition process
Data Source
AI summary
Semiconductor devices and methods of fabricating the same are provided. The methods may include forming an isolation region defining a fin active region, forming a sacrificial field gate pattern on the isolation region and forming a sacrificial fin gate pattern on the fin active region. The method may also include forming a field gate cut zone comprising a first recess exposing a surface of the isolation region and a fin active cut zone comprising a second recess exposing a surface of the fin active region, forming a fin active recess in the second recess of the fin active cut zone and forming a field gate core and a fin active core by forming an insulation material in the first recess of the field gate cut zone and the fin active recess, respectively.