Fin Gate Structure With Dual Spacers for Higher Device Density
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Solution Overview
Problem
The semiconductor industry faces challenges in processing and manufacturing integrated circuits (ICs) due to the complexity and cost associated with scaling down ICs, which requires improvements in manufacturing techniques to enhance device density and reduce costs.
Innovation Solution
A method for forming semiconductor device structures involving the use of sacrificial semiconductor layers, fin formation, and dielectric features to create smaller gate electrode layers, utilizing materials like SiGe and SiO2, and employing advanced etching and deposition processes to achieve higher device density and cost efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional scaling down processes are used to increase functional density, then device density improves, but processing complexity and manufacturing costs increase
Solution Approach 1:
The patent divides the gate electrode formation into multiple stages using sacrificial layers. First, a sacrificial semiconductor layer is formed and patterned, then spacers are deposited and etched back, followed by removal of the sacrificial layer to create the final gate electrode pattern. This segmentation allows complex high-density patterns to be achieved through simpler sequential steps rather than direct complex patterning.
Solution Approach 2:
The sacrificial semiconductor layer is formed and positioned in advance before the actual gate electrode structure is created. This preliminary structure serves as a template that guides subsequent spacer formation and material deposition, enabling precise positioning of high-density device features without requiring complex real-time alignment processes.
2Productivity
If geometry size is decreased to increase functional density, then production efficiency improves, but manufacturing complexity increases
Solution Approach 1:
The patent introduces sacrificial semiconductor layers as intermediary structures that facilitate the formation of smaller geometry features. These sacrificial layers act as temporary templates that enable precise deposition and patterning of sub-10nm gate electrodes through self-aligned processes, achieving high production efficiency at reduced geometry sizes without proportionally increasing manufacturing complexity.
Solution Approach 2:
The patent employs a nested structure where sacrificial semiconductor layers are embedded within the gate electrode formation process. The sacrificial layer is formed first, then spacers are deposited around it, and finally the sacrificial layer is removed to reveal the precise gate pattern. This nesting approach allows complex small-geometry patterns to be formed through layered, self-aligned steps that maintain manufacturing efficiency.
3Quantity of substance
If advanced etching and deposition processes are employed to form smaller gate electrode layers, then device density increases, but manufacturing costs increase
Solution Approach 1:
The sacrificial semiconductor layer structure enables self-aligned spacer formation and gate electrode patterning without requiring additional complex alignment steps or expensive specialized equipment. The sacrificial layer automatically defines the positioning for subsequent material deposition through conformal spacer formation, allowing high device density to be achieved using standard manufacturing processes rather than costly advanced lithography techniques.
Data Source
AI summary
A semiconductor device structure, along with methods of forming such, are described. The structure includes a semiconductor fin including a first surface, a second surface opposite the first surface, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The semiconductor device structure further includes a gate electrode layer disposed adjacent the first, third, and fourth surfaces of the semiconductor fin, a first source/drain epitaxial feature in contact with the semiconductor fin, and a first inner spacer disposed between the first source/drain epitaxial feature and the gate electrode layer. The first inner spacer is in contact with the first source/drain epitaxial feature, and the first inner spacer comprises a first material. The semiconductor device structure further includes a first spacer in contact with the first inner spacer, and the first spacer comprises a second material different from the first material.