Fin Gate Structure With Lateral Extension for Current Control
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Solution Overview
Problem
The miniaturization of semiconductor devices poses a challenge in maintaining the height of the gate structure, which affects its ability to control current and increase noise levels due to reduced control over transistor on and off states.
Innovation Solution
A semiconductor device design featuring a first fin structure on a substrate, surrounded by an insulating structure, with a gate structure that includes extending portions disposed between the fin and insulating structures, enhancing the gate's control over current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the dimensions of semiconductor devices are reduced to minimize device size, then the device area is reduced, but the gate structure height cannot be maintained, reducing current control capability
Solution Approach 1:
The gate structure is designed to extend in the lateral direction between the fin structure and the insulating structure, transforming the height control problem into a lateral extension solution. This dimensional change allows the gate to achieve sufficient control length without increasing vertical height, thereby maintaining current control capability while accommodating miniaturized device dimensions.
Solution Approach 2:
The gate structure is divided into multiple segments: a first gate portion extending between the fin structure and insulating structure, and a second gate portion extending over the insulating structure. This segmentation allows each gate portion to independently contribute to current control, with the first portion providing control in the limited vertical space and the second portion extending control laterally, collectively resolving the height limitation issue.
2Volume of moving object
If the gate structure height is reduced to fit miniaturized devices, then the device area is reduced, but the ability to control transistor on and off states deteriorates, increasing noise
Solution Approach 1:
Instead of relying solely on vertical gate height for control, the invention extends gate control laterally by having the gate structure extend between the fin structure and insulating structure. This lateral extension compensates for reduced vertical height, maintaining sufficient gate control capability for reliable transistor switching and reducing noise.
Solution Approach 2:
The gate structure serves multiple functions: the first gate portion provides control in the vertical region between fin and insulating structure, while the second gate portion extends control over the insulating structure. This multi-functional design ensures reliable transistor control despite miniaturization, addressing both area reduction and control capability requirements.
Data Source
AI summary
A semiconductor device includes a first fin structure, an insulating structure and a gate structure. The first fin structure is disposed on a substrate. The insulating structure is disposed on the substrate and surrounding the first fin structure. The gate structure is disposed on the first fin structure. The gate structure includes a first extending portion disposed between the first fin structure and the insulating structure.