Fin Guard Ring Structure for Electrostatic Protection in ICs
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Solution Overview
Problem
The increasing demand for high-performance, high-speed, and multifunctional semiconductor devices with fine patterns and integration density poses challenges in operating characteristics due to the small size of planar metal oxide semiconductor field effect transistors (MOSFETs), particularly in achieving effective guard rings for enhanced integration and protection.
Innovation Solution
A semiconductor device design incorporating a substrate with guard rings and insulating material structures, featuring multiple guard active fins, contact structures, and interconnection structures, where the guard rings surround integrated circuit structures and include stacked semiconductor layers, such as silicon and silicon-germanium, to enhance protection and integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration is increased to meet demand for high performance and high speed, then integration density is improved, but operating characteristics deteriorate due to small size of planar MOSFETs
Solution Approach 1:
The patent transitions from planar MOSFETs to FinFETs by introducing a three-dimensional channel structure with vertical fins. This dimensional change allows the channel to extend vertically, increasing the effective channel area and improving current drive capability while maintaining a small planar footprint, thus resolving the contradiction between integration density and operating characteristics
Solution Approach 2:
The patent implements multiple nested guard rings (first guard ring surrounding the integrated circuit structure, second guard ring surrounding the first guard ring) with different depths and functions. This nested arrangement provides layered electrostatic protection while maximizing space utilization, enabling enhanced protection without proportionally increasing the device footprint
2Productivity
If fine patterns are implemented for high integration density, then integration density is improved, but manufacturing precision becomes more difficult to achieve
Solution Approach 1:
The patent divides the channel region into multiple discrete fins separated by isolation regions. This segmentation allows each fin to be independently formed and controlled, improving manufacturing precision by breaking down the complex three-dimensional structure into manageable units that can be fabricated using standard semiconductor processing techniques
Solution Approach 2:
The patent applies different materials and structures to different regions: silicon-germanium is used in specific guard ring regions while silicon is used in other areas, and insulating material structures are selectively placed on side surfaces of guard rings. This local differentiation optimizes each region's function while maintaining overall manufacturability
3Reliability
If guard rings are added to protect integrated circuit structures, then reliability is improved, but device complexity increases
Solution Approach 1:
The guard ring structures serve multiple functions: they provide electrostatic protection, act as isolation regions, and can be integrated with the active fin structures. The insulating material structures on the side surfaces of guard rings provide both electrical isolation and mechanical support. This multi-functionality reduces the need for separate protective structures, thereby limiting the increase in device complexity
Data Source
AI summary
A semiconductor device includes a substrate; a guard ring disposed on the substrate and adjacent to an edge of the substrate; an integrated circuit structure surrounded by the guard ring and disposed on the substrate; and an insulating material structure disposed on a side surface of the guard ring, and wherein the guard ring includes a plurality of guard active structures on the substrate, a plurality of guard contact structures disposed on each of the plurality of guard active structures, and a guard interconnection structure disposed on a pair of guard contact structures adjacent to each other, among the plurality of guard contact structures, wherein each of the plurality of guard active structures includes a plurality of guard active fins spaced apart from each other.