FinFET Fin Height Variation via Etching-Stop Sub-Layers
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Solution Overview
Problem
Existing FinFET semiconductor devices face challenges in varying fin heights, which limits the ability to create transistors with different on-currents, as they typically require uniform fin heights for lithographic patterning, restricting the design of high-performance integrated circuits.
Innovation Solution
The use of etching-stop sub-layers with different materials, such as SiGe and Si, allows for varying etching depths, enabling the formation of fins with different heights and channel widths, thereby enabling the creation of semiconductor devices with diverse driving capabilities without increasing layout area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If uniform fin heights are used for lithographic patterning, then manufacturing ease is improved, but device versatility deteriorates
Solution Approach 1:
The semiconductor layer is segmented into multiple sub-layers with different etching resistances. By selectively etching through different numbers of sub-layers, fins with different heights can be created using the same lithographic pattern, thus maintaining manufacturing ease while achieving device versatility.
Solution Approach 2:
Different regions of the semiconductor layer are given different local qualities through the stacked sub-layers structure. Each sub-layer has distinct etching resistance properties, allowing local variation in fin heights while using a uniform lithographic approach, resolving the contradiction between manufacturing ease and device versatility.
2Device complexity
If fin height is fixed, then manufacturing simplicity is improved, but current control capability deteriorates
Solution Approach 1:
The invention changes the parameter of etching resistance by stacking sub-layers with different materials and properties. This allows the fin height parameter to be varied by controlling the number of sub-layers etched, providing current control capability while maintaining relatively simple device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the precise control of fin heights and channel widths, enabling the production of semiconductor devices with varied on-currents, enhancing the performance of integrated circuits by providing devices with different driving abilities.
Implementation Method 1
different etching depths for fins can be obtained by means of etching-stop sub-layers
Data Source
AI summary
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a semiconductor layer comprising a plurality of semiconductor sub-layers; and a plurality of fins formed in the semiconductor layer and adjoining the semiconductor layer, wherein at least two of the plurality of fins comprise different numbers of the semiconductor sub-layers and have different heights. According to the present disclosure, a plurality of semiconductor devices with different dimensions and different driving abilities can be integrated on a single wafer.