Fin Integrated Semiconductor Device With Slits For Heat Dissipation
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Solution Overview
Problem
The existing semiconductor devices with heat dissipation fins face issues with insulation reliability due to deformation caused by temperature and molding pressure during the transfer mold process, leading to cracks in the insulating layer and compromised heat dissipation properties.
Innovation Solution
A semiconductor device with fins formed by integral processing on a metallic base plate, featuring an insulating layer, a circuit pattern, and a semiconductor element sealed with a sealing resin, where the fins have slits passing through their thickness to prevent deformation during resin molding and enhance heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a gap is provided between the molding die and the end of the fins to accommodate dimensional tolerance, then the molding process can be performed without deformation, but insulation reliability deteriorates when cracks are generated in the insulating layer
Solution Approach 1:
The insulating layer is formed on the metal substrate before the fins are formed, ensuring that the insulating layer is already in place to prevent cracks during subsequent fin formation and molding processes. This preliminary action ensures insulation reliability is maintained even when dimensional tolerances require gaps between the molding die and fins.
2Productivity
If the outer periphery of the metal substrate comes into contact with the molding die to prevent resin leakage, then mass productivity is improved, but deformation is generated in the metal substrate due to temperature and molding pressure
Solution Approach 1:
The insulating layer is formed on the metal substrate before molding, providing protective coverage that prevents deformation and crack generation during the molding process. This allows the outer periphery of the metal substrate to contact the molding die for efficient resin containment and mass production without compromising substrate integrity.
Solution Approach 2:
The insulating layer acts as a cushioning layer between the metal substrate and the molding die, absorbing and distributing the molding pressure and thermal stress. This beforehand cushioning prevents deformation of the metal substrate while still allowing contact between the substrate periphery and molding die for efficient molding.
3Reliability
If silicon-based resin material is applied on the metal substrate to join the fin base, then insulation properties are improved, but the number of manufacturing processes increases and heat dissipation properties deteriorate
Solution Approach 1:
The insulating layer and the joining function are merged into a single integrated layer. The insulating layer simultaneously provides electrical insulation and serves as the joining medium between the metal substrate and fin base, eliminating the need for separate silicon-based resin material application and reducing the number of manufacturing processes while maintaining both insulation and heat dissipation properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses the generation of cracks in the insulating layer and maintains high heat dissipation properties and insulation reliability by minimizing deformation of the metal base plate during the transfer mold process.
Implementation Method 1
a thick metal substrate or ceramic substrate, provided with a circuit pattern is used for a substrate that fixes the semiconductor element
Implementation Method 2
a fin base formed with heat dissipation fins is screwed to be joined to a metal substrate and the heat dissipation area of the substrate is enlarged
Data Source
AI summary
An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.