Semiconductor Fin Oxynitride Interface for Impurity Diffusion Control
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Solution Overview
Problem
As semiconductor devices continue to reduce minimum feature sizes for increased integration density, challenges arise in controlling diffusion of elements, dopants, and impurities within nanostructures, affecting transistor performance and reliability.
Innovation Solution
Incorporation of diffusion barrier layers, specifically a first diffusion barrier layer over nanostructures and a second diffusion barrier layer at endpoints, to inhibit the diffusion of elements and impurities, thereby maintaining control over the composition and crystal structure of channel regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If minimum feature sizes are reduced to increase integration density, then more components can be integrated into a given area, but control over diffusion of elements, dopants, and impurities becomes difficult
Solution Approach 1:
A diffusion barrier layer is introduced as an intermediary between the semiconductor layer and adjacent structures. This barrier layer selectively prevents diffusion of elements, dopants, and impurities while allowing fabrication processes to continue at reduced feature sizes, thus resolving the contradiction between increased integration density and maintained manufacturing precision
Solution Approach 2:
The patent modifies the material composition and structural parameters by introducing a diffusion barrier layer with specific properties (selective permeability). This parameter change enables the system to maintain control over diffusion processes even as feature sizes are reduced, allowing higher integration density without sacrificing manufacturing precision
2Reliability
If diffusion barrier layers are added to control diffusion, then transistor performance and reliability improve, but device complexity increases
Solution Approach 1:
The diffusion barrier layer is applied selectively only where diffusion control is needed (at specific interfaces and regions), rather than throughout the entire device. This localized approach improves transistor performance and reliability while minimizing the increase in overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves transistor yield, performance, and reliability by preventing diffusion of impurities and maintaining performance characteristics of nanostructures, enhancing the fabrication process.
Implementation Method 1
Incorporation of diffusion barrier layers, specifically a first diffusion barrier layer over nanostructures and a second diffusion barrier layer at endpoints, to inhibit the diffusion of elements and impurities
Data Source
AI summary
In an embodiment, a method of forming a semiconductor device includes: forming a first oxide layer over a semiconductor fin structure; performing a first nitridation process to convert the first oxide layer to an oxynitride layer; depositing a silicon-containing layer over the oxynitride layer; performing a first anneal on the silicon-containing layer, wherein after performing the first anneal, the oxynitride layer has a higher nitrogen atomic concentration at an interface with the semiconductor fin structure than in a bulk region of the oxynitride layer; and forming a dummy gate structure over the silicon-containing layer.