Fin Active Area Layout for Leakage-Controlled IC Current Paths
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Solution Overview
Problem
The demand for miniaturized, multifunctional, and high-performance electronic products necessitates the development of integrated circuit devices with high capacity and integration, while maintaining efficient wiring structures to ensure operational speed and functionality.
Innovation Solution
An integrated circuit device is designed with a fin-type active area on a substrate, featuring multiple doped areas with different conductivity types, and a filling insulating layer that extends between source/drain areas, allowing for efficient current paths and reduced leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the fin-type active area is divided into multiple doped areas with different conductivity types, then the current path control and device performance are improved, but the manufacturing precision and alignment difficulty increase
Solution Approach 1:
The filling insulating layer is positioned to automatically overlap with the boundaries between doped areas, using the layer's own geometric configuration to achieve self-alignment. This self-service mechanism eliminates the need for additional alignment steps between the filling insulating layer and doped areas, resolving the technical contradiction by making the system self-aligning rather than requiring external precision control
Solution Approach 2:
The boundary between doped areas is designed to include a portion substantially perpendicular to the first horizontal direction, changing the geometric parameter of the boundary orientation. This parameter change enables the boundary to align with the filling insulating layer's extent direction, achieving automatic overlap and simplifying manufacturing while maintaining reliable current path control
2Reliability
If the filling insulating layer extends between source/drain areas in a direction crossing the fin-type active area, then the leakage current is reduced and device reliability is improved, but the device complexity increases
Solution Approach 1:
The filling insulating layer simultaneously serves multiple functions: it electrically isolates adjacent source/drain areas to prevent leakage current, defines boundary regions between doped areas, and provides a reference geometry for alignment. This multi-functionality reduces the need for separate structures, thereby decreasing overall device complexity while maintaining reliability
Solution Approach 2:
The filling insulating layer acts as an intermediary structure between source/drain areas and doped areas. By extending between source/drain areas and overlapping with doped area boundaries, it mediates the interaction between these components, providing both electrical isolation and structural definition without requiring additional complex wiring or isolation structures
Data Source
AI summary
An integrated circuit device includes: a substrate including a first surface and a second surface; a fin-type active area extending on the first surface of the substrate in a first horizontal direction, and including a first area and a second area that are adjacent to each other; a first source/drain area arranged on the first area of the fin-type active area; a second source/drain area arranged on the second area of the fin-type active area; and a first filling insulating layer extending between the first source/drain area and the second source/drain area, wherein the first area includes a first conductivity type, wherein the second area includes a second conductivity type that is different from the first conductivity type, and wherein a boundary between the first area and the second area includes a portion that is substantially perpendicular to the first horizontal direction, and overlaps the filling insulating layer.