Fin Pattern Layout With Insulating Isolation for Threshold Stability
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Solution Overview
Problem
As semiconductor devices scale down, the operation characteristics deteriorate due to high-integration, leading to issues such as increased threshold voltages and reduced electrical performance.
Innovation Solution
A semiconductor device design featuring fin patterns with specific width configurations and an insulating structure between them, along with a connection contact and conductive patterns, which reduces tensile stress and improves electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If fin patterns are closely spaced to increase integration density, then device integration is improved, but tensile stress increases causing threshold voltage deterioration
Solution Approach 1:
An insulating structure is introduced as an intermediary element between adjacent fin patterns. This insulating structure acts as a mediator that prevents direct mechanical interaction between fins, thereby reducing tensile stress while maintaining close spacing for high integration density. The insulating material fills the space between fins and provides mechanical isolation.
Solution Approach 2:
The fin patterns are designed with non-uniform widths where central fins have smaller widths compared to outer fins. This local variation in fin width creates differential stress distribution, with narrower central fins experiencing reduced tensile stress. The insulating structure is also selectively positioned between specific fin pairs to target stress reduction in critical regions.
2Productivity
If fin width is reduced to increase number of fins, then integration density is improved, but electrical characteristics deteriorate due to stress effects
Solution Approach 1:
Different fin regions are assigned different widths based on their position and stress requirements. Central fins have reduced widths to fit more fins in the area, while outer fins maintain larger widths for mechanical stability. The insulating structure is selectively placed between specific fin pairs to provide targeted stress reduction where needed most.
Solution Approach 2:
Insulating structures are positioned between adjacent fin patterns to act as mechanical mediators. These insulating elements prevent stress transfer between narrow central fins, allowing them to maintain reduced widths for high density while avoiding the threshold voltage deterioration that would normally result from tensile stress in such narrow structures.
Data Source
AI summary
A semiconductor device includes a first fin pattern extending in a first direction, source/drain patterns on the first fin pattern, a gate electrode extending in a second direction, an insulating structure in contact with the first fin pattern, a lower conductive pattern and an upper conductive pattern overlapping the insulating structure in a third direction, and a connection contact extending through the insulating structure and electrically connecting the lower conductive pattern and the upper conductive pattern. The first fin pattern includes a first fin portion, a second fin portion spaced apart from the first fin portion, and a third fin portion between the first fin portion and the second fin portion. A width in the second direction of the first fin portion and a width in the second direction of the second fin portion are greater than a width in the second direction of the third fin portion.