Fin LDMOS Field Plate Layout for Breakdown and Leakage Control
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Solution Overview
Problem
The integration of lateral double-diffused metal-oxide-semiconductor (LDMOS) devices with fin-shaped structures faces challenges such as current leakage and control of breakdown voltage as device scales continue to decrease.
Innovation Solution
A method for fabricating LDMOS devices involves forming fin-shaped structures on a substrate, creating shallow trench isolation between them, forming gate structures on the fin-shaped structures, and integrating a contact field plate directly on the shallow trench isolation to enhance breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If LDMOS devices are integrated with fin-shaped structures to reduce size, then device scaling is improved, but current leakage increases and breakdown voltage control becomes difficult
Solution Approach 1:
The device is divided into multiple fin-shaped structures (first fin-shaped structure and second fin-shaped structure) separated by shallow trench isolation. This segmentation allows independent control of different regions while maintaining compact overall size, resolving the contradiction between device scaling and breakdown voltage control
Solution Approach 2:
A contact field plate is introduced as an intermediary element between the gate structure and the STI region. This field plate mediates the electrical field distribution, enabling improved breakdown voltage control in the scaled device structure without increasing overall device footprint
2Volume of moving object
If device size is reduced through scaling, then integration density is improved, but current leakage increases
Solution Approach 1:
The harmful lateral electric field that causes current leakage is extracted and redirected through the contact field plate structure. By placing the field plate on the STI, the electric field is channeled through a controlled path, eliminating the leakage path that would exist in a conventional scaled device
Solution Approach 2:
The field control is extended into the vertical dimension by placing the contact field plate on top of the STI structure rather than only in the planar region. This three-dimensional field management approach effectively suppresses current leakage while maintaining device scaling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method improves the breakdown voltage and reduces current leakage in LDMOS devices by leveraging the coupling effect of the contact field plate, ILD layers, and gate structures, thereby enhancing device performance without increasing complexity or cost.
Implementation Method 1
leveraging the coupling effect of the contact field plate, ILD layers, and gate structures
Data Source
AI summary
A lateral diffusion metal oxide semiconductor (LDMOS) device includes a first fin-shaped structure on a substrate, a shallow trench isolation (STI) adjacent to the first fin-shaped structure, a first gate structure on the first fin-shaped structure, a spacer adjacent to the first gate structure, and a contact field plate adjacent to the first gate structure and directly on the STI. Preferably, a sidewall of the spacer is aligned with a sidewall of the first fin-shaped structure.