Fin Mask Patterning for Consistent Width in Semiconductor Devices
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving consistent and predictable fin widths during the mandrel-spacer-spacer patterning process in IC manufacturing, leading to variations in fin dimensions and complexity in processing and manufacturing.
Innovation Solution
The method involves designing ICs with specific fin width and pitch specifications, using a mandrel-spacer-spacer patterning process to form mandrel and cut mask patterns, and manufacturing masks to ensure consistent fin widths, allowing for precise control over fin dimensions and uniformity in IC design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If mandrel-spacer-spacer patterning process is used to form fins, then fin formation is achieved, but variations in fin width occur due to deposition and etching process variations
Solution Approach 1:
The mandrel structure is formed in advance with precise dimensions before the spacer deposition. The mandrel serves as a pre-established template that defines the final fin width, allowing the subsequent spacer formation to be more predictable and consistent.
Solution Approach 2:
The mandrel acts as an intermediary structure that mediates between the patterning process and the final fin structure. It transfers the desired fin width information to the spacers through the spacer formation process, ensuring consistent fin dimensions.
2Productivity
If scaling down is implemented to increase functional density, then production efficiency improves and costs decrease, but processing and manufacturing complexity increases
Solution Approach 1:
The fin formation process is segmented into distinct stages: mandrel formation, first spacer formation, and second spacer formation. Each stage can be independently optimized and controlled, making the overall complex process more manageable and manufacturable at scaled dimensions.
Solution Approach 2:
The invention uses parameter changes in the spacer deposition process, specifically controlling the thickness of the spacer material to precisely define the fin pitch and width. By adjusting deposition parameters, consistent fin dimensions are achieved despite scaling down.
Data Source
AI summary
A method includes receiving an integrated circuit (IC) design layout that includes a design boundary and a pair of design fin patterns having a fin spacing and a fin pitch. The method further includes creating a mandrel mask pattern, which includes determining an edge of the mandrel mask pattern based on a location of the design boundary, the fin spacing, and the fin pitch, and determining a width of the mandrel mask pattern based on the fin spacing and the fin pitch. The method further includes creating a cut mask pattern based on the mandrel mask pattern and the design fin patterns, wherein the cut mask pattern is configured to protect an area of a semiconductor wafer corresponding to the design fin patterns. The method further includes fabricating a mandrel mask having the mandrel mask pattern and fabricating a cut mask having the cut mask pattern.