Fin Structure Notches for Leakage Reduction

The patent divides the fin structure into multiple segments by introducing notches at different heights along the fin. This segmentation creates isolated regions that prevent carrier transport between adjacent fins, thereby improving isolation while maintaining high device density. The notches effectively split the continuous fin structure into discrete segments that are electrically isolated from each other.

The patent introduces notches at different vertical heights along the fin structure, utilizing the vertical dimension to create isolation. By forming notches at multiple levels (first notches at a first height, second notches at a second height), the patent creates a three-dimensional isolation scheme that prevents lateral carrier transport between fins while maintaining horizontal packing density.

The patent merges the isolation function with the fin structure itself by introducing notches directly into the fin. Instead of adding separate isolation structures between fins, the isolation features are integrated into the fin geometry through notching, thereby improving fin isolation without significantly increasing overall device complexity.

The notches act as intermediary features within the fin structure that provide isolation functionality. These notches serve as both structural elements of the fin and isolation barriers, mediating between the conflicting requirements of maintaining fin continuity for device function and creating isolation barriers to reduce leakage current.