Fin-Based Optoelectronic Semiconductor Chip for Efficiency
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Solution Overview
Problem
Optoelectronic semiconductor chips, such as light-emitting diode chips, face efficiency losses due to the Auger effect at high current densities and defects in semiconductor material, leading to increased costs and reduced conversion efficiencies, especially in non-polar or semipolar quantum well structures.
Innovation Solution
The design incorporates fins with active regions on their side surfaces, increasing the base area without enlarging the chip size, reducing defect density, and allowing deposition on non-polar surfaces to minimize piezoelectric effects, using III-V compound semiconductor materials with the active region on the A-plane to enhance charge carrier capture.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the base area of the light-emitting diode chip is increased to operate at low current densities, then the efficiency is improved, but the chip size and cost increase
Solution Approach 1:
The invention transitions from a planar active region to a three-dimensional fin structure with vertical sidewalls. The active region is formed on the sidewalls of the fin, utilizing the vertical dimension to increase the effective base area for light emission without increasing the horizontal chip footprint. This dimensional transition allows high efficiency operation at low current densities while maintaining compact chip size.
Solution Approach 2:
The active region is nested on the sidewalls of the fin structure, which itself is integrated into the chip. This nested configuration allows the active region to be positioned in a space-efficient manner, maximizing the emitting area within the constraints of the chip geometry without requiring additional horizontal space.
2Area of stationary object
If microrods are used to increase the active region area, then the base area is increased, but the defect density in the semiconductor material increases
Solution Approach 1:
Instead of using microrods with complex three-dimensional geometries that are difficult to manufacture precisely, the invention employs fins with vertical sidewalls that can be fabricated using standard semiconductor processing techniques. The active region is formed on the sidewalls of these fins, achieving increased active region area while maintaining manufacturing precision and lower defect density through compatibility with established fabrication processes.
3Area of stationary object
If non-polar or semipolar quantum well structures are used in microrods, then the active region area is increased, but the conversion efficiency decreases due to non-radiative recombination at defects
Solution Approach 1:
The invention applies local quality by forming the active region specifically on the sidewalls of the fin structure, where the crystal orientation and material properties can be optimized for radiative recombination. By concentrating the active region in this specific location with controlled local properties, the design achieves high conversion efficiency while maintaining increased active region area, avoiding the defect-related efficiency losses associated with microrod structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables operation at lower current densities with improved efficiency, reduced defect occurrence, and minimized piezoelectric effects, resulting in higher conversion efficiencies and mechanical stability compared to microrod structures.
Implementation Method 1
an important loss mechanism, for example, in the operation of light-emitting diode chips, is the Auger effect. This effect leads to a reduced efficiency in the generation of electromagnetic radiation
Implementation Method 2
an important loss mechanism, for example, in the operation of light-emitting diode chips, is the Auger effect. This effect leads to a reduced efficiency in the generation of electromagnetic radiation in the range of high current densities
Implementation Method 3
it is possible to deposit the active region exclusively on non-polar surfaces
Data Source
AI summary
An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.