Fin Pattern Semiconductor Device with Field Dispersion Region
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Solution Overview
Problem
Current semiconductor devices, particularly power MOSFETs, face challenges in optimizing the breakdown voltage characteristics and ON resistance due to the complexity of the double diffusion structure, which affects the efficiency and reliability of the device.
Innovation Solution
The semiconductor device incorporates a fin pattern on a substrate with specific conductivity regions and a field dispersion region to improve breakdown voltage characteristics by dispersing the electric field and minimizing current path extension to the substrate, thereby reducing ON resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a double diffusion structure is used to form power MOSFET, then the power gain and switching performance are improved, but the breakdown voltage characteristics and ON resistance are compromised due to structural complexity
Solution Approach 1:
The device is segmented into multiple fins (first fin, second fin, third fin) with distinct doping regions. Each fin has a body region, drift region, and field dispersion region, allowing independent optimization of electrical characteristics for each segment while maintaining overall device performance.
Solution Approach 2:
Different regions of the fin structure have different doping concentrations and types. The body region has one conductivity type, the drift region has the first conductivity type with optimized doping for breakdown voltage, and the field dispersion region has the second conductivity type to control electric field distribution locally.
2Area of stationary object
If the current path is extended to the substrate, then the device area is increased, but the ON resistance increases and efficiency decreases
Solution Approach 1:
The current path is redirected from a planar extension to the substrate into the vertical dimension by confining it within the fin structure. The field dispersion region and optimized doping profiles guide current flow through the vertical channel, reducing the horizontal current path length and associated resistance.
3Device complexity
If the electric field is concentrated in one region, then the device structure is simplified, but the breakdown voltage characteristics deteriorate
Solution Approach 1:
The field dispersion region with second conductivity type doping is strategically placed to create localized electric field control. This region disperses the electric field concentration that would otherwise occur at critical interfaces, improving breakdown voltage without requiring complex overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design enhances breakdown voltage characteristics and minimizes ON resistance by effectively dispersing the electric field and confining the current path within the fin pattern, improving the overall performance and efficiency of the semiconductor device.
Implementation Method 1
a field dispersion region of a second conductivity type and situated within the fin pattern as interposed between the gate electrode and the drain region
Implementation Method 2
minimizing current path extension to the substrate, thereby reducing ON resistance
Data Source
AI summary
A semiconductor device has reduced ON resistance (Ron) as well as a reduced electric field emanating from a current path. The semiconductor device includes a fin pattern, a gate electrode intersecting the fin pattern, a source region which has a first conductivity type and is disposed on one side of the gate electrode, a body region which has a second conductivity type, is situated within the fin pattern under the source region, and extends in a loop around the source region, a drain region which has the first conductivity type and is disposed on the other side of the gate electrode, a field dispersion region which has the second conductivity type and is situated within the fin pattern between the gate electrode and the drain region, and a drift region which has the first conductivity type, is situated within the fin pattern under the drain region and the field dispersion region, and extends in a loop around the drain region and the field dispersion region.