Fin Structure With Vertical Protrusion for Stronger Gate Control
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Solution Overview
Problem
Semiconductor devices, such as BCATs, face issues like decreased threshold voltage and current leakage due to the recessed channel, affecting performance and stability.
Innovation Solution
A semiconductor structure with a fin structure having a protrusion extending upwards along a trench sidewall, which is covered by a conductive element, increasing the gate control region and improving gate control over the channel.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate control region area is increased to improve gate control, then gate control is improved, but device complexity increases
Solution Approach 1:
The fin structure is segmented into distinct components: a horizontal fin body and a vertical protrusion extending from it. This segmentation allows the protrusion to function as an independent gate control region, increasing effective control area without requiring complete redesign of the entire fin structure, thus managing complexity through modular design.
Data Source
AI summary
A method of manufacturing a semiconductor structure is provided. The method includes providing a semiconductor substrate having an active region, forming a fin structure in the active region, and forming a conductive element on the body portion and the first tapered portion of the fin structure. The fin structure includes a body portion, and a first tapered portion protruding from an upper surface of the body portion.