High-Aspect-Ratio Fin Structure Reshaping for Gate Formation
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Solution Overview
Problem
The semiconductor industry faces challenges in scaling planar devices like MOSFETs, particularly in forming three-dimensional structures such as FinFETs, where the inward bending of fin structures during manufacturing processes complicates the formation of subsequent gate structures and increases resistance, affecting device performance.
Innovation Solution
The method involves forming insulation material layers and performing specific pre-treatment and conversion processes to apply stress to fin structures, allowing them to bend outwardly or inwardly, which helps in reshaping the structures to facilitate the filling of gate materials and improve device performance by adjusting the spacing between fin structures and gate spacers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fin structures are formed during manufacturing processes, then three-dimensional device performance is improved, but inward bending of fin structures occurs which complicates subsequent gate structure formation and increases resistance
Solution Approach 1:
The patent applies preliminary action by performing a pre-treatment process on the insulation material layer before the main manufacturing steps. This pre-treatment modifies the insulation material properties in advance, enabling subsequent stress control that prevents fin structure bending and maintains manufacturing precision throughout the fabrication process.
Solution Approach 2:
The patent utilizes parameter changes by modifying the stress state of the insulation material layer through controlled expansion or contraction. By changing the physical parameters of the insulation material (volume, density), the patent counteracts the inward bending forces on fin structures, maintaining their vertical alignment and reducing resistance in subsequent gate formation.
2Adaptability or versatility
If insulation material layers are used to apply stress to fin structures, then spacing between fin structures can be adjusted, but additional manufacturing steps are required
Solution Approach 1:
The patent applies universality by designing the insulation material layer to serve multiple functions simultaneously: it acts as a structural support layer, a stress control mechanism for spacing adjustment, and a protective layer during manufacturing. This multi-functionality reduces the need for separate dedicated structures for each function, offsetting the added manufacturing steps with process integration benefits.
Solution Approach 2:
The patent implements self-service by enabling the insulation material layer to automatically adjust fin structure spacing through its inherent stress properties. The material's expansion or contraction characteristics allow it to self-regulate the spacing between fin structures without requiring complex external control mechanisms, reducing overall device complexity despite additional manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the ability to form subsequent gate structures and source/drain structures, reducing resistance and improving the overall performance of FinFETs by controlling the stress applied to fin structures during the manufacturing process.
Implementation Method 1
The insulation material layer subjected to the insulation material conversion process may apply a stress to the adjacent fin structures
Data Source
AI summary
A semiconductor structure and a method for forming the same are provided. The method includes forming a first protruding structure, a second protruding structure, and a third protruding structure over a substrate. The method also includes performing a depositing process to form a first insulation material layer between the first protruding structure and the second protruding structure. The method further includes performing a first insulation material conversion process onto the first insulation material layer to bend the first protruding structure and the second protruding structure toward opposite directions.