Fin Structure IPA Rinse and Bake Against Collapse
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Solution Overview
Problem
Current FinFET fabrication methods face issues with current leakage due to the design of fin-shaped structures, leading to performance degradation.
Innovation Solution
A method involving the use of isopropyl alcohol (IPA) for rinsing and a subsequent baking process is introduced to clean and dry fin-shaped structures, followed by forming a gate oxide layer, which prevents the structures from falling during pitch reduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If fin-shaped structures are formed with reduced pitch to increase device density, then device integration is improved, but the fin-shaped structures collapse during fabrication
Solution Approach 1:
The patent applies preliminary action by performing a rinse process with isopropyl alcohol and a baking process before forming the gate oxide layer. This preliminary treatment removes organic contaminants and strengthens the fin-shaped structures in advance, preventing collapse during subsequent fabrication steps when pitch is reduced for higher device integration.
2Device complexity
If conventional fabrication methods are used without rinse and bake processes, then process complexity is reduced, but current leakage occurs due to fin-shaped structure design
Solution Approach 1:
The patent converts the potential harm of added process steps into a benefit by using the rinse and bake processes to eliminate current leakage. The isopropyl alcohol rinse removes organic contaminants that would otherwise cause leakage, and the baking process strengthens the structures, transforming what appears to be increased complexity into improved device reliability.
3Manufacturing precision
If rinse process duration is extended to improve cleaning effectiveness, then contamination removal is enhanced, but processing time increases
Solution Approach 1:
The patent applies parameter changes by optimizing the rinse process duration to a specific range (15-60 seconds) and controlling the baking temperature (50-100°C) and duration (5-120 seconds). These parameter optimizations ensure effective contaminant removal and structure strengthening while minimizing processing time, achieving a balance between cleaning effectiveness and production efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents fin-shaped structures from collapsing, maintaining structural integrity and enhancing the fabrication process of semiconductor devices.
Implementation Method 1
using isopropyl alcohol (IPA) to perform a rinse process
Implementation Method 2
performing a baking process
Data Source
AI summary
A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.