Fin-Shaped Active Regions With Protruding Patterns
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Solution Overview
Problem
The challenge in semiconductor device manufacturing is to achieve high integration with improved current control and reduced short channel effects while maintaining low cost and high quality, which existing fin-shaped active region transistors struggle to address effectively.
Innovation Solution
A semiconductor device design featuring a substrate with fin-shaped active regions and protruding patterns, where the fin-shaped active regions are spaced apart by a first pitch and the protruding patterns are spaced apart from both fin-shaped active regions and each other by a second pitch greater than the first pitch, with an isolation layer and gate structures on the fin-shaped active regions, allowing for efficient current control and reduced short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fin-shaped active regions are used to improve current control and reduce short channel effects, then device performance is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The device is segmented into multiple fin-shaped active regions spaced at different pitches. First pitch regions contain fins spaced at a first pitch, while second pitch regions contain fins spaced at a second pitch greater than the first pitch. This segmentation allows different regions to be optimized for different functions, resolving the contradiction between performance improvement and complexity management.
Solution Approach 2:
Different regions of the device are assigned different local qualities through varying fin spacing pitches. The first pitch regions provide one level of current control, while the second pitch regions provide enhanced current control and short channel effect reduction. This local differentiation allows the device to achieve high performance without uniformly increasing complexity across the entire device structure.
2Productivity
If fin-shaped active regions are used to achieve high integration, then device density is improved, but manufacturing precision requirements increase
Solution Approach 1:
The high integration device is segmented into regions with different fin pitches. By dividing the device into first pitch regions and second pitch regions, the manufacturing process can target different precision levels for different regions, reducing the overall precision burden while maintaining high integration density.
Solution Approach 2:
Instead of applying uniform high precision requirements across the entire device, the invention applies enhanced precision only where needed (in specific pitch regions), while other regions can be manufactured with relaxed precision tolerances. This partial application of precision requirements reduces overall manufacturing difficulty while achieving the desired integration density.
Data Source
AI summary
Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.