Fin Shaped Semiconductor Device With Tipped Ends And Dummy Gate
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Solution Overview
Problem
The miniaturization of semiconductor devices poses challenges in forming fin-shaped structures with precise dimensions due to physical limitations and optical proximity effects, leading to deformed edges and reduced reliability in semiconductor devices.
Innovation Solution
A semiconductor device with a dummy gate structure that includes an extending portion covering the tipped ends of fin-shaped structures, formed through a method involving shallow trench isolations and precise gate structure formation to address the deformed edges caused by optical proximity effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the width of fin-shaped structures is reduced to achieve miniaturization, then device density increases, but manufacturing precision deteriorates due to optical proximity effects causing deformed edges
Solution Approach 1:
The dummy gate structure is formed in advance during the gate formation process, before subsequent processing steps. This preliminary structure provides immediate coverage and protection to the fin-shaped structure edges, preventing defects that would otherwise occur during later manufacturing steps. The extending portion is created proactively to address the optical proximity effect issues before they manifest as actual defects.
Solution Approach 2:
The dummy gate structure acts as an intermediary element between the gate electrode and the fin-shaped structure edges. It provides a transitional structure that extends beyond the standard gate boundaries to cover the vulnerable tipped ends of the fins. This intermediary structure protects the fin edges from direct exposure to processing conditions that would cause deformation, while not interfering with the normal operation of the active gate region.
2Device complexity
If standard gate structure is used without extending portions, then device complexity is reduced, but reliability deteriorates due to uncovered deformed edges
Solution Approach 1:
The gate structure is segmented into two functional parts: the main gate electrode that performs the primary switching function, and the extending portion of the dummy gate structure that provides protective coverage. This segmentation allows each part to serve its specific purpose - the main gate for device operation and the extending portion for edge protection - without requiring complete redesign of the entire gate system.
Solution Approach 2:
The dummy gate structure with its extending portion serves multiple functions simultaneously: it provides physical coverage to protect fin edges from deformation, acts as a placeholder during processing steps, and maintains structural continuity across the device. This multi-functional approach increases reliability without proportionally increasing device complexity, as the same structural element performs multiple protective and functional roles.
Data Source
AI summary
A semiconductor device and a method of forming the same, the semiconductor device includes a plurality of fin shaped structures and a dummy gate structure. The fin shaped structures are disposed in a substrate, where at least one of the fin shaped structures has a tipped end. The dummy gate structure is disposed on the substrate, and includes an extending portion covering the tipped end.