Fin-Shaped Structure Formation Using Spacer Masks
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Solution Overview
Problem
The miniaturization of semiconductor devices poses challenges in forming fin-shaped structures with uniform widths and spacings, as the narrow widths and shrinking spacings between these structures complicate the manufacturing process and lead to physical limitations and processing issues.
Innovation Solution
A method involving the formation of spacers on a substrate, followed by etching to create fin-shaped structures, and a cutting process to remove unnecessary parts, ensuring uniform widths across different areas, thereby achieving an accurate and uniform layout of fin-shaped structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the width of fin-shaped structures is narrowed and spacing is reduced to meet miniaturization demands, then device density and integration are improved, but manufacturing precision and process control deteriorate
Solution Approach 1:
The method performs preliminary actions by first forming spacers with precise widths, then using them as masks to define fin structures. The spacers are formed before the fin etching process, establishing a predetermined pattern that guides subsequent manufacturing steps. This preliminary patterning ensures uniform fin widths even as dimensions are reduced for miniaturization.
Solution Approach 2:
The patent introduces spacers as an intermediary element between the pattern definition and the final fin structure. The spacers serve as a mediating mask that transfers the desired fin pattern to the substrate through etching. This intermediary step decouples the spacer fabrication precision from the final fin dimension control, allowing independent optimization of each process.
2Device complexity
If traditional etching methods are used for miniaturized fin structures, then process simplicity is maintained, but etching load effect increases causing non-uniform fin widths
Solution Approach 1:
The method segments the fin formation process into distinct stages: spacer formation, pattern transfer etching, and selective fin removal. By dividing the process, each step can be optimized independently. The spacer-based mask creates separated etching zones that reduce the cumulative etching load effect, ensuring uniform fin widths across dense and isolated areas.
Solution Approach 2:
The patent applies local quality by using spacers to create different etching conditions in different regions. The spacer mask enables precise local control of etching, allowing fins in dense areas and isolated areas to be formed with identical widths despite different local environments. This local precision compensates for the global etching load variations.
3Area of stationary object
If fin spacing is reduced for miniaturization, then device integration is improved, but physical limitations and processing restrictions increase
Solution Approach 1:
The patent moves the pattern definition to a different dimensional approach by using vertically formed spacers as masks instead of planar photolithography patterns. This dimensional shift allows precise lateral fin spacing control through vertical spacer thickness, bypassing the resolution limits that constrain planar patterning at miniaturized scales.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the formation of uniform fin-shaped structures with consistent widths in dense, isolated, and edge areas, reducing the etching load effect and enhancing the manufacturing process by maintaining consistent dimensions despite varying spacings.
Implementation Method 1
The substrate is etched by using the spacers to serve as hard masks to form a plurality of fin-shaped structures in the substrate
Data Source
AI summary
A method of forming fin-shaped structures includes the following steps. A plurality of spacers is formed on a substrate. The substrate is etched by using the spacers as hard masks to form a plurality of fin-shaped structures in the substrate. A cutting process is then performed to remove parts of the fin-shaped structures and the spacers formed on the removed parts.