Fin Structure Stress Pattern for Semiconductor Carrier Mobility
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Solution Overview
Problem
Current multi-gate transistors face challenges in scaling and reducing short channel effects, which affect carrier mobility and electrical potential in the channel region, particularly due to the limitations in gate length and channel geometry.
Innovation Solution
A semiconductor device design featuring a fin structure with a stress pattern including oxide regions with varying germanium concentrations, applied tensile stress to enhance carrier mobility, and a gate electrode intersecting the fin structure to improve control and reduce short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a multi-gate transistor is used to improve current control capability and reduce short channel effects, then carrier mobility and electrical potential control are improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate electrode and second gate electrode) that wrap around the channel region from opposite directions. This segmentation allows independent control of electrical potential in the channel, improving current control capability while maintaining manageable complexity through modular gate design
Solution Approach 2:
Different regions of the channel receive different stress conditions through selectively positioned stress patterns. The first stress pattern is applied to a first region of the channel while the second stress pattern is applied to a second region, allowing localized optimization of carrier mobility in different channel segments
2Reliability
If the gate length is increased to reduce short channel effects, then electrical potential control improves, but device scaling is limited
Solution Approach 1:
The gate structure transitions from a planar configuration to a three-dimensional wrapped configuration around the channel. This dimensional change allows the gates to control electrical potential throughout the channel volume without requiring increased gate length, enabling continued device scaling while maintaining effective short channel effect reduction
3Reliability
If stress material is added to increase carrier mobility, then device performance improves, but manufacturing precision requirements increase
Solution Approach 1:
The stress application is segmented into multiple discrete stress patterns positioned at different locations. This segmentation allows each stress pattern to be manufactured and positioned independently, reducing the cumulative precision requirements compared to a single continuous stress structure while maintaining overall stress effectiveness
Solution Approach 2:
Stress is applied locally at specific positions rather than uniformly across the entire device. The first stress pattern is positioned to affect a first region of the channel while the second stress pattern affects a second region, allowing manufacturing tolerances to be managed locally rather than requiring global precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively increases carrier mobility and reduces short channel effects, enabling improved control and scalability of the transistor without increasing gate length, thereby enhancing the performance of semiconductor devices.
Implementation Method 1
A semiconductor device design featuring a fin structure with a stress pattern including oxide regions with varying germanium concentrations, applied tensile stress to enhance carrier mobility
Data Source
AI summary
Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.