Semiconductor Fin Structure Thickness Tuning for Critical Dimension Control
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Solution Overview
Problem
As semiconductor devices undergo continuous reductions in minimum feature size, challenges arise in achieving precise control over the thickness and conformality of additional layers in fin structures, leading to issues like loading and porosity, which affect the integration density and performance of electronic components.
Innovation Solution
A method involving the formation of a semiconductor fin structure where an initial base layer is etched and an additional layer is deposited, followed by thermal treatment with oxygen radicals to adjust the thickness, consuming portions of the additional layer and improving the conformality and density of the second layer, thereby achieving a desired critical dimension.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If additional layers are deposited over etched fin structures to increase integration density, then more components can be integrated into a given area, but loading and porosity issues arise that affect manufacturing precision
Solution Approach 1:
A mandrel layer is formed over the fin structure before depositing the additional layer. This mandrel serves as a preliminary structure that prevents loading and porosity during deposition, ensuring uniform thickness and conformality of the additional layer while enabling higher integration density
Solution Approach 2:
The mandrel layer acts as an intermediary between the fin structure and the additional layer. It mediates the deposition process by providing a support structure that eliminates loading effects and ensures uniform material distribution, thereby maintaining manufacturing precision while increasing integration density
2Productivity
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but control over additional layer thickness becomes more difficult
Solution Approach 1:
The mandrel layer is formed in advance with dimensions and properties optimized for the subsequent deposition process. This preliminary structure ensures that even as minimum feature sizes are reduced, the additional layer can be deposited with precise thickness control and uniform conformality
Solution Approach 2:
The mandrel layer changes the physical parameters of the deposition environment by providing a support structure that maintains uniform material flow and deposition rates. This allows precise critical dimension control even when feature sizes are reduced to increase integration density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the conformality and density of the second layer, reduces loading, and repairs sub-oxide, resulting in improved integration density and performance of semiconductor devices by achieving a precise critical dimension in fin structures.
Implementation Method 1
performing a thermal anneal process to reduce the thickness of the additional layer of fin material
Implementation Method 2
performing a thermal anneal process to reduce the thickness of the additional layer of fin material
Data Source
AI summary
Provided is a device including a fin structure and methods for forming such a device. A method includes forming an initial fin having a sidewall. Further, the method includes forming an additional layer of fin material over the sidewall, wherein the additional layer has a thickness. Also, the method includes adjusting the thickness of the additional layer of fin material to form a fin structure with a desired critical dimension.