Fin Structure Stability via Supporting Oxide Layer
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Solution Overview
Problem
As semiconductor devices scale down, it becomes challenging to maintain the desired fin structure dimensions during manufacturing, leading to fin collapse or unintended removal, which adversely affects the yield of semiconductor devices.
Innovation Solution
A method involving a substrate with an insulator and semiconductor layers, where a hard mask layer is patterned and used to etch the semiconductor layer, followed by an oxygen-based treatment to form a supporting oxide layer, which helps in preventing fin collapse and improving yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the critical dimension of the fin structure is scaled down to achieve smaller device dimensions, then the device density and integration are improved, but the fin structure becomes unstable and prone to collapse or unintended removal during manufacturing
Solution Approach 1:
The patent applies preliminary action by forming a supporting oxide layer beneath the fin structure before subsequent manufacturing steps. This oxide layer is created through oxygen-based treatment that oxidizes the semiconductor layer in advance, providing structural support that prevents fin collapse during later processing when the fin dimensions are small
Solution Approach 2:
The supporting oxide layer acts as an intermediary between the substrate and the fin structure. This oxide layer mediates the mechanical stress and provides structural support, preventing direct contact between the fragile thin fin and the substrate, thereby preventing collapse while allowing the fin to maintain its small dimensions
2Length of moving object
If the fin thickness is continuously decreased to reduce critical dimension, then device scaling is achieved, but the fin structure becomes susceptible to unintended removal during subsequent manufacturing processes
Solution Approach 1:
The supporting oxide layer is formed in advance through oxygen-based treatment before subsequent manufacturing steps. This preliminary formation of the oxide layer provides continuous structural support during processing, preventing unintended removal of the thin fin structure and ensuring high manufacturing yield
Solution Approach 2:
The oxide layer serves as a cushioning layer formed beforehand that absorbs mechanical stress and protects the thin fin structure from damage during subsequent processing steps. This beforehand cushioning prevents unintended removal and maintains fin integrity throughout manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents fin collapse and unintended removal, enhancing the yield of semiconductor devices by forming a stable fin structure even at reduced dimensions.
Implementation Method 1
performing an oxygen-based treatment on the semiconductor layer to oxidize the second portion of the semiconductor layer to form a supporting oxide layer
Data Source
AI summary
A semiconductor device and manufacturing method for the same are disclosed. The method includes providing a substrate that has an insulator layer and a semiconductor layer overlying the insulator layer. The method further includes forming a hard mask layer pattern on the semiconductor layer and etching the semiconductor layer using the patterned hard mask layer to form portions having different thickness in the semiconductor layer. The method also includes performing an oxygen-based treatment on the semiconductor layer to form a supporting oxide layer. A portion of the semiconductor layer is buried in the supporting oxide layer.