Semiconductor Fin-Type Gate Insulation Thickness Segmentation
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Solution Overview
Problem
Current semiconductor devices face challenges in scaling and improving operating performance, particularly in suppressing the short channel effect and enhancing current controlling capability without increasing gate length, which is not effectively addressed by existing gate all around structures.
Innovation Solution
The semiconductor device incorporates a field insulation layer with varying thicknesses for different parts, along with dummy and gate stacks featuring high-k insulation layers and spacers, to optimize the gate insulation layer thickness and structure for improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate all around structure is used to achieve scaling and improve current controlling capability, then the current controlling capability is improved, but the short channel effect is not effectively suppressed
Solution Approach 1:
The gate structure is segmented into multiple portions (first gate portion, second gate portion, third gate portion) with different insulation layer thicknesses. The first gate portion has a thinner gate insulation layer for strong control, while the second and third gate portions have thicker gate insulation layers to suppress the short channel effect at different locations along the channel.
Solution Approach 2:
Different regions of the gate structure are assigned different insulation layer thicknesses according to their specific functional requirements. The first gate portion (over the first fin type pattern) uses a thinner insulation layer for optimal control, while the second and third gate portions (over field insulation layer parts) use thicker insulation layers to address local short channel effects.
2Productivity
If the gate all around structure is used to achieve scaling, then scaling is easily achieved, but the operating performance is limited
Solution Approach 1:
The gate insulation layer thickness is made dynamic rather than uniform, with varying thicknesses in different gate portions. This allows the structure to adapt to different operational requirements along the channel, improving overall device performance while maintaining the scalability of the gate-all-around architecture.
Solution Approach 2:
The key parameter of gate insulation layer thickness is changed from a uniform value to a spatially varying parameter. By adjusting the thickness parameter in different gate portions, the device achieves both scaling capability and improved operating performance through optimized electrical characteristics.
3Object-affected harmful factors
If the gate length is increased to suppress the short channel effect, then the short channel effect is suppressed, but the current controlling capability deteriorates
Solution Approach 1:
Instead of uniformly increasing gate length, the gate is segmented into portions with different insulation thicknesses. This allows suppression of short channel effects through localized thickness variations without requiring an overall increase in gate length, thereby preserving current controlling capability.
Solution Approach 2:
The solution addresses short channel effects locally by varying insulation layer thickness in specific gate portions rather than globally increasing gate dimensions. This localized approach suppresses harmful effects while maintaining the overall gate length and current controlling capability.
Data Source
AI summary
A semiconductor device including fin type patterns is provided. The semiconductor device includes a first fin type pattern, a field insulation layer disposed in vicinity of the first fin type pattern and having a first part and a second part, the first part protruding from the second part, a first dummy gate stack formed on the first part of the field insulation layer and including a first dummy gate insulation layer having a first thickness, and a first gate stack formed on the second part of the field insulation layer to intersect the first fin type pattern and including a first gate insulation layer having a second thickness different from the first thickness.