Fin-Type Semiconductor Device With Blocking Pattern For Short-Circuit Prevention
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Solution Overview
Problem
As semiconductor devices are miniaturized, there is a risk of short-circuiting between adjacent transistor source/drain regions, which reduces device yield without a corresponding reduction in transistor size.
Innovation Solution
A semiconductor device design featuring fin-type patterns with blocking patterns between semiconductor patterns, where a part of the semiconductor pattern is inserted into the blocking pattern, preventing short-circuiting while maintaining transistor size and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are miniaturized, then device size is reduced and performance is improved, but source/drain regions of adjacent transistors may short-circuit
Solution Approach 1:
A blocking pattern is introduced as an intermediary structure between adjacent semiconductor patterns. This blocking pattern acts as a mediator that prevents direct contact and potential short-circuiting between source/drain regions of adjacent transistors, while allowing each transistor to maintain its full size and performance characteristics.
Solution Approach 2:
The blocking pattern segments the continuous semiconductor structure by creating distinct separated regions. By dividing the structure into isolated semiconductor patterns with blocking material between them, the patent prevents unwanted electrical interaction between adjacent transistors while maintaining individual transistor functionality.
2Reliability
If blocking patterns are added between semiconductor patterns, then short-circuit prevention is improved, but device complexity increases
Solution Approach 1:
The blocking pattern is applied locally only where needed between adjacent semiconductor patterns, rather than throughout the entire device structure. This localized approach provides necessary short-circuit prevention at critical interfaces while minimizing the overall structural complexity and material usage.
Data Source
AI summary
A semiconductor device is provided. The Semiconductor device includes a substrate, a first fin type pattern and a second fin type pattern which protrude from an upper surface of the substrate and are spaced apart from each other, a first semiconductor pattern on the first fin type pattern, a second semiconductor pattern on the second tin type pattern and a blocking pattern between the first semiconductor pattern and the second semiconductor pattern, a part of the first semiconductor pattern being inserted in the blocking pattern.