Fin-Type Semiconductor Device Scaling Short Channel Effects

The patent transitions from planar 2D channel structures to three-dimensional fin-type channel structures. The fin-type active pattern extends vertically from the substrate, creating a 3D channel that provides better gate control over the current flow while maintaining scaled dimensions. This dimensional change allows the gate to control the channel from multiple directions (top and sidewalls), effectively suppressing short channel effects even as device size decreases and integration density increases.

Instead of increasing gate length in the planar direction to control short channel effects, the patent uses vertical fin structures that extend upward from the substrate. The gate wraps around the fin structure, providing control from the top and sidewalls. This allows effective short channel effect suppression without increasing the lateral gate length, thereby maintaining device scaling and high integration density.

The patent combines multiple fin-type patterns in close proximity to form a multi-gate transistor structure. The gate structure merges to control multiple fins simultaneously, with the gate extending over and around the fins. This merging approach allows closely spaced fins to function as a unified device, achieving high integration density while the gate structure provides uniform control across multiple fins, reducing the impact of slight variations in fin alignment.