Fin-Type IC Work Function Control Layer Step Portion
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Solution Overview
Problem
The increasing demand for high integration and downscaling of integrated circuit devices leads to a short channel effect in transistors, reducing the reliability of these devices, which existing technologies have struggled to address effectively.
Innovation Solution
An integrated circuit device with a multi-gate structure is proposed, featuring fin-type active areas, element isolation layers, and specific gate structures with work function control layers to optimize the threshold voltage control and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integrated circuit devices are downscaled to achieve high integration, then device density and integration level are improved, but short channel effect increases and reliability deteriorates
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate structure and second gate structure) positioned at different locations (front gate and back gate) to independently control different portions of the channel. This segmentation allows separate control of threshold voltage and carrier flow, enabling effective suppression of short channel effect while maintaining high integration density
Solution Approach 2:
The invention transitions from planar 2D channel control to 3D multi-gate control by adding a back gate structure beneath the channel region. This dimensional extension provides an additional control dimension for managing channel characteristics, effectively counteracting short channel effects in scaled devices
2Measurement precision
If work function control layer thickness is increased to control threshold voltage, then threshold voltage control precision is improved, but device performance and efficiency deteriorate
Solution Approach 1:
The work function control layer is applied selectively with different thicknesses in different regions: a first thickness in the first active area and a second thickness in the second active area. This local differentiation enables precise threshold voltage control for each transistor type (n-type and p-type) while optimizing overall device performance through region-specific tuning
Solution Approach 2:
The invention controls threshold voltage by adjusting the thickness parameter of the work function control layer rather than changing material composition. By varying thickness locally across different active areas, precise threshold voltage control is achieved while maintaining optimal device performance characteristics
Data Source
AI summary
An integrated circuit device includes a first fin-type active area and a second fin-type active area protruding from a substrate and extending in a first direction, an element isolation layer between the first and second fin-type active areas on the substrate, first semiconductor patterns being on a top surface of the first fin-type active area and having channel areas, second semiconductor patterns being on a top surface of the second fin-type active area and having channel areas, a first gate structure extending on the first fin-type active area in a second direction and including a first work function control layer surrounding the first semiconductor patterns and comprising a step portion on the element isolation layer, and a second gate structure extending on the second fin-type active area in the second direction and including a second work function control layer surrounding the second semiconductor patterns.