Fine-Grain DRAM Channel Layout for Shorter Signal Paths
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing memory devices face challenges in achieving high throughput and low power consumption due to long conductive paths between components, which lead to inefficiencies and increased power consumption, especially when accessing memory cells.
Innovation Solution
The memory device is configured with a partitioned array of memory cells, where each region includes a plurality of banks communicatively coupled to a host device via channels with data pins, command/address pins, and clock pins, minimizing the signal path length between memory cells and the interface to achieve high throughput within an energy budget, and using I/O areas with terminals positioned to bisect the banks and reduce signal path lengths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If memory cells are accessed through long conductive paths, then connectivity is achieved, but power consumption increases and throughput decreases
Solution Approach 1:
The memory array is divided into multiple regions, each with its own set of channel terminals positioned at different locations around the perimeter. This segmentation allows memory cells to be accessed through shorter conductive paths by selecting the nearest region, thereby reducing power consumption and increasing throughput.
Solution Approach 2:
Channel terminals are positioned at multiple locations around the perimeter of the memory array rather than at a single centralized location. This spatial distribution across different dimensions of the device reduces the average distance signals must travel to reach memory cells, improving both power efficiency and data access speed.
2Loss of time
If channel terminals are positioned at perimeter locations, then signal path length is reduced, but device complexity increases
Solution Approach 1:
The memory device is divided into multiple regions with channel terminals distributed around the perimeter. Each region can be independently accessed, reducing signal path length for memory cells near any given perimeter location. This segmentation strategy reduces time loss without requiring complex internal routing.
Solution Approach 2:
Different regions of the memory array are associated with different channel terminal locations around the perimeter. This local quality approach allows each region to be optimized for its specific spatial location, minimizing signal path length for local access while maintaining overall device functionality.
Data Source
AI summary
Systems, apparatuses, and methods related to dynamic random access memory (DRAM), such as finer grain DRAM, are described. For example, an array of memory cells in a memory device may be partitioned into regions. Each region may include a plurality of banks of memory cells. Each region may be associated with a data channel configured to communicate with a host device. In some examples, each channel of the array may include two or more data pins. The ratio of data pins per channel may be two or four in various examples. Other examples may include eight data pins per channel.