Fine Pattern-Forming Composition for Negative Photoresist
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Solution Overview
Problem
Existing methods for miniaturizing resist patterns in semiconductor production often result in surface roughness, bridge defects, and resolution failure, particularly when using chemically amplified positive-working type photoresists and organic solvent developers.
Innovation Solution
A fine pattern-forming composition comprising a polymer with specific structures, such as those represented by formulas (A), (B), or (C), and a solvent is used to coat and heat the resist pattern, allowing for miniaturization without excessive reaction and penetration, thereby stabilizing the pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional miniaturization methods are used on negative resist patterns, then pattern shrinkage is achieved, but surface roughness, bridge defects, and resolution failures occur
Solution Approach 1:
The patent changes the chemical parameters of the coating composition by using a polymer with specific structures (formulas A, B, or C) that have controlled basicity and reactivity. This prevents excessive reactions with the acid-containing negative resist pattern while still enabling pattern shrinkage, thereby improving surface quality without sacrificing manufacturing precision
Solution Approach 2:
The polymer coating acts as an intermediary layer between the developer and the resist pattern. It moderates the interaction by controlling the reaction between the organic solvent developer and the acid in the negative resist, preventing direct harmful interactions that cause surface roughness and bridge defects while still allowing the desired pattern shrinkage effect
2Ease of manufacture
If basic compositions are used to coat resist patterns, then coatability improves, but excessive reactions with acid-containing patterns occur causing resolution failures
Solution Approach 1:
The patent carefully controls the basicity parameter of the polymer coating by selecting specific polymer structures (formulas A, B, or C) and adjusting the polymer concentration (0.1-10 wt%). This creates an optimal balance where the coating is basic enough to provide good coatability but not so basic as to cause excessive reactions with the acid-containing negative resist pattern, thereby maintaining pattern resolution
3Manufacturing precision
If conventional crosslinking compositions are used, then pattern miniaturization is achieved, but bridge defects and surface roughness occur
Solution Approach 1:
The patent converts the potentially harmful excessive basicity into a beneficial controlled basicity. By using polymers with specific structures that have moderate basicity, the composition can still achieve pattern miniaturization through controlled interaction with the acid in the negative resist, but without causing the harmful bridge defects and surface roughness that result from uncontrolled excessive reactions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents surface roughness and resolution failures, enabling the stable formation of fine negative photoresist patterns beyond the resolution limit.
Implementation Method 1
heating the resist pattern to diffuse the acid comprised in the resist so that the composition on the resist may be crosslinked to form a crosslinked layer at the interface therebetween
Implementation Method 2
positive-working type resists, whose solubilities to alkaline developers are increased by exposure to light
Implementation Method 3
the composition on the resist may be crosslinked to form a crosslinked layer at the interface therebetween
Data Source
AI summary
[Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition.[Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C):and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.